Abstract:The adoption of green solvents is of utmost importance for the solution-based fabrication of semiconductor thin-films and for the commercialization of (opto)electronic devices, especially in response to evolving regulatory mandates for handling organic materials. Despite increasing interest in this area, the scarcity of green solvent-processed n -channel OFETs, especially functioning in ambient conditions, highlights the need for further research. In this study, we demonstrated the Hansen solubility approach to study the solubility behavior of an ambient-stable n-type semiconductor, 2,2'-(2,8-bis(3-dodecylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile ( β,β'-C 12 -TIFDMT ), and to analyze potential green solvents for thin-film processing. The Hansen solubility parameters were determined to be δ D = 20.8 MPa 1/2 , δ P = 5.8 MPa 1/2 , δ H = 5.5 MPa 1/2 with a radius (R 0 ) of 8.3 MPa 1/2 . A green solvent screening analysis based on minimal distance constraint and quantitative sustainability score identified ethoxybenzene, anisole, 2-methylanisole, and 2-methyltetrahydrofuran as suitable green solvents (R a 's = 5.17-7.93 MPa 1/2 < R 0 ). A strong thermodynamic correlation was identified between the solubility and the semiconductor-solvent distance in the 3D Hansen solubility space, in which the maximum solubility limit could be estimated with the semiconductor's enthalpy of fusion (∆H fus ) and melting temperature (T mp ). To the best of our knowledge, this relationship between maximum solubility limit and thermal properties is being established for the first time for an organic semiconductor. Bottom-gate/top-contact OFETs fabricated by spin-coating the semiconductor green solutions exhibited μ e 's reaching to ⁓0.2 cm 2 /V·s (I on /I off ⁓ 10 6 -10 7 and V on ⁓ 0-5 V) in ambient. This device performance, to our knowledge, is the highest reported for an ambient-stable green solvent-processed n -channel OFET. Our HSP-based rational approach and unique findings presented in this study can shed a critical light on how green solvents can be efficiently incorporated in solution processing in organic (opto)electronics, and whether ambient-stable n -type semiconductors can continue to play an important role in green-OFETs.

Ambient stable solution-processed organic field effect transistors from electron deficient planar aromatics: effect of end-groups on ambient stability

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Ambient−Stable 2D Dion−Jacobson Phase Tin Halide Perovskite Field−Effect Transistors with Mobility Over 1.6 Cm2 V−1 S−1

Air Stable N-Channel Organic Semiconductors for Thin Film Transistors Based on Fluorinated Derivatives of Perylene Diimides

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n-Type organic semiconducting polymers: stability limitations, design considerations and applications

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Solution-processed and Air-Stable N-Type Organic Thin-Film Transistors Based on Thiophene-Fused Dicyanoquinonediimine (DCNQI) Deriatives.

Hansen Solubility Approach Towards Green Solvent Processing: N-Channel Organic Field-Effect Transistors in Ambient

Strain-Balanced Organic Semiconductor Film for Improving the Stability of Organic Field-Effect Transistors

Bandgap Engineering of an Aryl-Fused Tetrathianaphthalene for Visible-Blind Organic Field-Effect Transistors

High Field-Effect Mobility Oligofluorene Derivatives with High Environmental Stability

Stable organic field-effect-transistors with high mobilities unaffected by supporting dielectric based on phenylene-bridged thienobenzothiophene

Enhanced Solvent and Thermal Stability in Cross‐Linkable Conjugated Statistical Copolymers for Organic Field‐Effect Transistors