Abstract:Because of its atomic thickness, excellent properties, and widespread applications, graphene is regarded as one of the most promising candidate materials for nanoelectronics. The wider use of graphene will require processes that produce this material in a controllable manner. In this Account, we focus on our recent studies of the controllable chemical vapor deposition (CVD) growth of graphene, especially few-layer graphene (FLG), and the applications of this material in electronic devices. CVD provides various means of control over the morphologies of the produced graph ene. We studied several variables that can affect the CVD growth of graphene, including the catalyst, gas flow rate, growth time, and growth temperature and successfully achieved the controlled growth of hexagonal graphene crystals. Moreover, we developed several modified CVD methods for the controlled growth of FLGs. Patterned CVD produced FLGs with desired shapes in required areas. By introducing dopant precursor in the CVD process, we produced substitutionally doped FLGs, avoiding the typically complicated post-treatment processes for graphene doping. We developed a template CVD method to produce FLG ribbons with controllable morphologies on a large scale. An oxidation-activated surface facilitated the CVD growth of polycrystalline graphene without the use of a metal catalyst or a complicated postgrowth transfer process. In devices, CVD offers a controllable means to modulate the electronic properties of the graphene samples and to improve device performance. Using CVD-grown hexagonal graphene crystals as the channel materials in field-effect transistors (FETs), we improved carrier mobility. Substitutional doping of graphene in CVD opened a band gap for efficient FET operation and modulated the Fermi energy level for n-type or p-type features. The similarity between the chemical structure of graphene and organic semiconductors suggests potential applications of graphene in organic devices. We used patterned CVD FLGs as the bottom electrodes in pentacene FETs. The strong π-π interactions between graphene and pentacene produced an excellent interface with low contact resistance and a reduced injection barrier, which dramatically enhances the device performance. We also fabricated reversible nanoelectromechanical (NEM) switches and a logic gate using the FLG ribbons produced using our template CVD method. In summary, CVD provides a controllable means to produce graphene samples with both large area and high quality. We developed several modified CVD methods to produce FLG samples with controlled shape, location, edge, layer, dopant, and growth substrate. As a result, we can modulate the properties of FLGs, which provides materials that could be used in FETs, OFETs, and NEM devices. Despite remarkable advances in this field, further exploration is required to produce consistent, homogeneous graphene samples with single layer, single crystal, and large area for graphene-based electronics.

Position-Induced Controllable Growth of Vertically Oriented Graphene Using Plasma-Enhanced Chemical Vapor Deposition

Controllable Fabrication of Vertical Graphene with Tunable Growth Nature by Remote Plasma-Enhanced Chemical Vapor Deposition

Facile growth of vertically-aligned graphene nanosheets via thermal CVD: The experimental and theoretical investigations

Insights into the Mechanism for Vertical Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

Plasma-enhanced Chemical Vapor Deposition Synthesis of Vertically Oriented Graphene Nanosheets

Efficient and Controllable Growth of Vertically Oriented Graphene Nanosheets by Mesoplasma Chemical Vapor Deposition

A route towards controlling the morphology of vertical graphene nanosheets

Growth direction manipulation of few-layer graphene in the vertical plane with parallel arrangement

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

Etching-Controlled Growth of Graphene by Chemical Vapor Deposition

PECVD of Vertical Graphene: Local Plasma or Nonlocal Plasma?

Vertically Standing Graphene: Heater‐Free and Substrate‐Independent Growth of Vertically Standing Graphene Using A High‐Flux Plasma‐Enhanced Chemical Vapor Deposition (Adv. Mater. Interfaces 18/2020)

Dc and Microwave Plasmas for Synthesis of Vertically Oriented Graphene

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Direct Plasma‐Enhanced‐Chemical‐Vapor‐Deposition Syntheses of Vertically Oriented Graphene Films on Functional Insulating Substrates for Wide‐Range Applications

Note: Continuous Synthesis of Uniform Vertical Graphene on Cylindrical Surfaces.

Controllable Chemical Vapor Deposition Growth of Few Layer Graphene for Electronic Devices.

Advancements in Plasma-Enhanced Chemical Vapor Deposition for Producing Vertical Graphene Nanowalls

Growth of vertical graphene materials by an inductively coupled plasma with solid-state carbon sources

A Growth Mechanism for Free-Standing Vertical Graphene

Controllable modulation of patterned vertical graphene through macro-geometries for high current field emitters