Abstract:Sputtering has been widely used to prepare thin film due to its good cohesion with substrate, high purity, compactness, repeatability and large area manufacture. Target is a key consumable material during production of thin film by sputtering. Generally, targets are mostly rare and high purity metal, so the cost of target is very high. In order to reduce the cost of target, to improve its stiffness, and to enhance the electrical and thermal conductivity, target is usually connected with backplane to form the target assembly. The main connection method is diffusion welding, which is used in the industrial production. However, the target and the backplane are usually two different materials with different physical properties such as coefficient of thermal expansion (CTE) and thermal conductivity. During the welding or soldering process of target, the mismatch of physical properties will lead to residual stress in target, which has a direct influence on the thickness and microstructure uniformity of the films. Hence, it is very meaningful to investigate the residual stress in target and to study its influencing factor. Based on the Co/ Al/Cu sandwich structure of backplane diffusion welding, the effects of Al interlayer and Ni(V) layer on welding residual stress were studied by finite element method. It was found that the application of the Al interlayer not only can make diffusion welding process easier and lower the diffusion welding temperature, but also can reduce the maximum residual stress from 142 MPa to 126 MPa. Furthermore, the location of the maximum residual stress also changes from the outer edge of the interface between target and backplane to the position near the symmetrical axis of target and Co/Al interface. Furthermore, there is an optimal thickness for Al interlayer (7 mm). Although the existence of Ni(V) layer can inhibit the generation of brittle intermetallic compounds at the interface of Co/Al and Cu/Al, it also increases the residual stress. Moreover, we find that the increase of residual stress with Ni(V) layer at only Co/Al interface, is smaller than that of adding Ni(V) layer at both Co/Al and Cu/Al interfaces.

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