Abstract:In this study, we have investigated the electron mobility of monolayer (ML) tetrahex-GeC 2 by solving the linearized Boltzmann transport equation (BTE) with the normalized full-band relaxation time approximation (RTA) using density functional theory (DFT). Contrary to what the deformation potential theory (DPT) suggested, the ZA acoustic mode was determined to be the most restrictive for electron mobility, not the LA mode. The electron mobility at 300 K is 803 cm2/(Vs), exceeding the 400 cm2/(Vs) of MoS2 which was calculated using the same method and measured experimentally. The Ab initio quantum transport simulations were performed to assess the performance limits of sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs, including gate lengths (L g ) of 3 nm, 5 nm, 7 nm, and 9 nm, with the underlap (UL) effect considered for the first two. For both high-performance (HP) and low-power (LP) applications, their on-state currents (I on ) can meet the requirements of similar nodes in the ITRS 2013. Specifically, the I on is more remarkable for HP applications than that of the extensively studied MoS 2 . For LP applications, the I on at L g of 7 and 9 nm surpasses that of Arsenene, known for being the largest Ion among 2D semiconductors. Subthreshold swings (SS) as low as 69/53 mV/dec at L g of 9 nm were observed for HP/LP applications, and 73 mV/dec at L g of 5 nm for LP applications, indicating excellent gate control capability. Moreover, the delay time τ and power dissipation (PDP) at Lg of 3 nm, 5 nm, 7 nm, and 9 nm are all below the upper limits of the ITRS 2013 HP/LP proximity nodes and are comparable to or lower than those of typical 2D semiconductors. The sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFETs can be down-scaled to 9 nm and 5 nm for HP and LP applications, respectively, displaying desirable Ion, delay time τ, and PDP in the ballistic limit, making them a potential choice for sub-10 nm transistors.

Indium doping-assisted monolayer Ga 2 O 3 exfoliation for performance-enhanced MOSFETs

Indium Doping-Assisted Monolayer Ga2O3 Exfoliation for Performance-Enhanced MOSFETs.

First-Principles-Based Quantum Transport Simulations of High- Performance and Low-Power MOSFETs Based on Monolayer Ga2O3

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Effective Suppression of MIS Interface Defects Using Boron Nitride Toward High-Performance Ta-Doped-β-Ga2O3 MISFETs.

Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Quantum transport simulations of sub-5 nm bilayer Ga2O3transistor for high-performance applications

Undoped β-Ga 2 O 3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Enhancement-mode Ga2O3 FETs with Unintentionally Doped (001) Β-Ga2o3 Channel Layer Grown by Metal-Organic Chemical Vapor Deposition

β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD

Liquid Ga–In–Sn Alloy Printing of GaInSnO Ultrathin Semiconductor Films and Controllable Performance Field Effect Transistors

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

Enhancing the quality of homoepitaxial ( − 201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium

High Performance Submicron Inversion-Type Enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO As Gate Dielectrics

Physical Analysis of Normally-off ALD Al2O3/GaN MOSFET with Different Substrates Using Self-Terminating Thermal Oxidation-Assisted Wet Etching Technique

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Comprehensive Understanding of Electron Mobility and Superior Performance in Sub-10 nm DG ML tetrahex-GeC 2 n-type MOSFET

Demonstration of β-Ga2O3 Superjunction-Equivalent MOSFETs