Abstract:Chalcogenide materials are unique for their peculiar linear and nonlinear optical properties and are suitable for various optoelectronic applications. External inputs alter multiple parameters of the material. The influence of laser irradiation on chalcogenide thin films brings changes in its structural, morphological, linear, and nonlinear properties for different applications. In the current report, the quaternary Ag 10 Te 10 As 20 Se 60 film was irradiated with 532 nm (2.33 eV) continuous laser for various durations. With the increase in the irradiation time, several changes in the material's structural and other optical properties were studied. The polycrystalline nature of the films remains the same upon irradiation, thus showing structural stability. The increase in laser irradiation exposure time also enhanced the heteropolar bonds in the film. The transparency of the material gradually increased with irradiation time and mostly showed in the infrared range (~ 1900 nm). This enables its application as window material in photodetectors and other infrared devices. The absorption edge of the material exhibits a blue shift, which also leads to an increase in the optical bandgap from 1.732 eV (unirradiated) to 2.010 eV (90 min irradiated). The photobleaching reduces refractive index, Urbach energy with the increase in nonlinear absorption coefficient. The χ (3) value reduced from 2.361 × 10 –10 esu (unirradiated) to 0.177 × 10 –10 esu for the 90 min irradiated film. Simultaneously, the optical electronegativity increased from 1.607 (unirradiated) to 1.729 for the 90 min irradiated film. The dielectric losses, carrier concentration, plasma frequency and nonlinear refractive index were also reduced with higher exposure time. The surface wettability of the films showed hydrophobicity properties and remains the same with laser irradiation. The changes in different parameters with laser irradiation make them good candidates for optoelectronic applications, particularly those exposed repeatedly to laser sources.

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