Abstract:Memristors have attracted tremendous interest in the fields of high-density memory and neuromorphic computing. However, despite the tremendous efforts that have been devoted over recent years, high operating voltage, poor stability, and large device variability remain key limitations for its practical application and can be partially attributed to the un-optimized interfaces between electrodes and the channel material. We demonstrate, for the first time, a van der Waals (vdW) memristor by physically sandwiching pre-fabricated metal electrodes on both sides of the two-dimensional channel material. The atomically flat bottom electrode ensures intimate contact between the channel and electrode (hence low operation voltage), and the vdW integration of the top electrode avoids the damage induced by aggressive fabrication processes (e.g. sputtering, lithography) directly applied to the channel material, improving device stability. Together, we demonstrate memristor arrays with a high integration density of 10(10) cm(-2), high stability, and the lowest set/reset voltage of 0.12 V/0.04 V, which is a record low value for all 2D-based memristors, as far as we know. Furthermore, detailed characterizations are conducted to confirm that the improved memristor behavior is the result of optimized metal/channel interfaces. Our study not only demonstrates robust and low voltage memristor, but also provides a general electrode integration approach for other memristors, such as oxide based memristors, that have previously been limited by non-ideal contact integration, high operation voltage and poor device stability.

Highly Stable HfO 2 Memristors through van der Waals Electrode Lamination and Delamination

Highly Stable HfO2 Memristors Through Van Der Waals Electrode Lamination and Delamination.

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Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor

BEOL Large-Scale Integration and Precise Programming of HfO$_{\textit{x}}$/AlO$_{\textit{y}}$ Superlattice-Like Multilevel Memristors

Resistive switching modulation by incorporating thermally enhanced layer in HfO2-based memristor

Performance Optimization of Atomic Layer Deposited HfOx Memristor by Annealing with Back-End-of-Line Compatibility

Performance Optimization of Atomic Layer Deposited HfO x Memristor by Annealing With Back-End-of-Line Compatibility

In-Depth Physical Mechanism Analysis and Wearable Applications of HfO x-Based Flexible Memristors

Homo-layer hafnia-based memristor with large analog switching window

HfAlO-based Ferroelectric Memristors for Artificial Synaptic Plasticity

Research on Electronic Synaptic Simulation of HfO2-based Memristor by Embedding Al2O3

Quantum-Dots Optimized Electrode for High-Stability Transient Memristor

Reproducible Non-Volatile Multi-State Storage and Emulation of Synaptic Plasticity Based on a Copper-Nanoparticle-Embedded HfOx/ZnO Bilayer with Ultralow-Switching Current and Ideal Data Retention

Forming and Compliance-free Operation of Low-energy, Fast-switching HfO$_x$S$_y$/HfS$_2$ Memristors

Highly Reliable Low-Voltage Memristive Switching and Artificial Synapse Enabled by Van Der Waals Integration