Abstract:A single crystal of lead-zirconate-titanate (PZT), composition Pb(Zr0.80Ti0.20)O3, was studied by polarized-Raman scattering as a function of temperature. Raman spectra reveal that the local structure deviates from the average structure in both ferroelectric and paraelectric phases. We show that the crystal possesses several, inequivalent complex domain boundaries which show no sign of instability even 200 K above the ferroelectric-to-paraelectric phase transition temperature TC. Two types of boundaries are addressed. The first boundary was formed between ferroelectric domains below TC. This boundary remained stable up to the highest measurement temperatures, and stabilized the domains so that they had the same orientation after repeated heating and cooling cycles. These domains transformed normally to the cubic paraelectric phase. Another type of boundary was formed at 673 K and exhibited no signs of instability up to 923 K. The boundary formation was reversible: it formed and vanished between 573 and 673 K during heating and cooling, respectively. A model in which the crystal is divided into thin slices with different Zr/Ti ratios is proposed. The physical mechanism behind the thermal-stress-induced structural changes is related to the different thermal expansion of the slices, which forces the domain to grow similarly after each heating and cooling cycle. The results are interesting for non-volatile memory development, as it implies that the original ferroelectric state can be restored after the material has been transformed to the paraelectric phase. It also suggests that a low-symmetry structure, stable up to high-temperatures, can be prepared through controlled deposition of layers with desired compositions.

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Domain behavior and polarization changes in ferroelectric films under stress

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Strain Effect on Ferroelectric Behaviors of BaTiO3nanowires: a Molecular Dynamics Study

Domain Evolution In Ferroelectric Thin Films During Fatigue Process

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Mechanical Stress Modified Ferroelectric Aging Behavior

Effects of Pb Excess and Temperature on Polarization Fatigue in Sol-Gel Derived Pb(Zr0.3ti0.7)O3 Thin Films

Effects of Stress and Electric Field on the Electromechanical Properties of Pb(Mg1∕3Nb2∕3)O3–0.32PbTiO3 Single Crystals

Coexisting Depinning Effect of Domain Walls During the Fatigue in Ferroelectric Thin Films

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

The Effects of Strain Relaxation on the Dielectric Properties of Epitaxial Ferroelectric Pb(Zr0.2ti0.8)Tio3 Thin Films

The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films

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The Effect of Stress on the Piezoelectric Properties of BNT–BT–ST Thin Films

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The Effect of Polar Nanoregions on Electromechanical Properties of Relaxor-Pbtio3 Crystals: Extracting from Electric-Field-induced Polarization and Strain Behaviors

Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

Stress Impact in Nd Doped Bi4Ti3O12 Thin Films

Understanding the Stress Effect of TiN Top Electrode on Ferroelectricity in Hf0.5Zr0.5O2 Thin Films