Effects of LiF on sintering characteristics and dielectric properties of low-loss SrCuSi4O10 ceramics for LTCC applications

Ping Zhang,Shanxiao Wu,Yonggui Zhao,Mi Xiao
DOI: https://doi.org/10.1016/j.matchemphys.2018.10.027
IF: 4.778
2019-01-01
Materials Chemistry and Physics
Abstract:The SrCuSi4O10-x wt% LiF (x = 0.5, 1.0, 1.5, 2.0) ceramics were prepared by the conventional solid-state route. The effects of LiF on the sintering behavior, microstructure, phase evolution and dielectric properties of the SrCuSi4O10 ceramics were systematically investigated. And the sintering temperature of SrCuSi4O10 ceramics has been reduced to 900 °C from 1100 °C with a certain amount of LiF. The SrCuSi4O10 ceramics with 1.0 wt% LiF addition sintered at 900 °C for 6 h exhibited excellent dielectric properties of εr∼5.88, tanδ∼1.6 × 10−3, τε∼119.90 ppm/°C. However, the relatively large positive τε was unfavorable to practical applications. Hence, the TiO2 that owned a considerable negative τε was introduced to obtain a desired τε value. The addition of 21 wt% TiO2 effectively improved the temperature stability of ceramics and τε was adjusted to near zero. The prepared SrCuSi4O10-1.0 wt% LiF-21 wt% TiO2 ceramics sintered at 900 °C for 6 h showed fairly good dielectric properties of εr∼6.73, tanδ∼3.7 × 10−3, τε∼1.80 ppm/°C.
materials science, multidisciplinary
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