A 64Mpixel CMOS Image Sensor with $0.50 \mu\mathrm{m}$ Unit Pixels Separated by Front Deep-Trench Isolation
Sungbong Park,ChangKyu Lee,Sangcheon Park,Haeyong Park,Taeheon Lee,Dami Park,Minsung Heo,Inyong Park,Hyunyoung Yeo,Youna Lee,Juhee Lee,Beomsuk Lee,Dong-Chul Lee,Jinyoung Kim,Bokwon Kim,Jinsun Pyo,Shili Quan,Sungyong You,Inho Ro,Sungsoo Choi,Sung-In Kim,In-Sung Joe,Jongeun Park,Chang-Hyo Koo,Jae-Ho Kim,Chong Kwang Chang,Taehee Kim,JinGyun Kim,Jamie Lee,Hyunchul Kim,Chang-rok Moon,Hyoung-Sub Kim
DOI: https://doi.org/10.1109/isscc42614.2022.9731750
2022-02-20
Abstract:CMOS image sensors (CISs) with deep-submicron pixels are now in high demand, as high-end mobile devices are equipped with multiple camera modules that are used for ultra-high-resolution imaging [1], [2]. The biggest challenges with small pixels are to maintain dynamic range (DR), signal-to-noise ratio (SNR), and sensitivity compatible with a sensor with larger pixels. A back-illuminated stacked sensor with front deep-trench isolation (FDTI) and shallow-trench isolation (STI) for inter-pixel and inter-node isolation respectively appears promising for continuous pixel-size reduction in terms of maximizing DR with large full-well capacity (FWC) while minimizing optical/electrical crosstalk [3]–[5]. However, dark current may increase by strong electric fields (e-field) near defective FDTI interfaces if more doping is applied to a small photodiode (PD) to increase FWC. In addition, the FDTI/STI structure limits the area of in-pixel transistor amplifiers, and it may deteriorate dark temporal noise (TN) as pixel pitch becomes smaller. Furthermore, optical crosstalk between different color filters (CFs) is more problematic as pixel size enters the sub-wavelength scale. In this work, a back-illuminated 64Mpixel CIS with $0.56\mu\mathrm{m}$ -pitched pixels is reported. We present pixel designs and fabrication processes that achieve competitive FWC, dark current, TN, and optical performances with small pixels.