Abstract:Modern CMOS imaging devices are present everywhere, in the form of line, area and depth scanners. These image devices can be used in the automotive field, in industrial applications, in the consumer’s market, and in various medical and scientific areas. Particularly in industrial and scientific applications, the low-light noise performance or the high dynamic-range features are often the cases of interest, combined with low power dissipation and high frame rates. In this sense, the noise floor performance and the power consumption are the focus of this work, given that both are interlinked and play a direct role in the remaining sensor features. It is known that thermal and flicker noise sources are the main contributors to the degradation of the sensor performance, concerning the sensor output image noise. This paper presents an indirect way to reduce both the thermal and the flicker noise contributions by using thin-oxide low voltage supply column readout circuits and fast 3rd order incremental sigma-delta converters with noise shaping capabilities (to provide low noise output digital samples—74 μVrms; 0.7 e−rms; at 105 μV/e−), and thus performing correlated double sampling in a short time (19 μs), while dissipating significant low power (346 μW). Throughout the extensive parametric transistor-level simulations, the readout path produced 1.2% non-linearity, with a competitive saturation capacity (6.5 ke−) pixel. In addition, this paper addresses the readout parallelism as the main point of interest, decoupling resolution from the image noise and the frame rate, at virtually any array resolution. The design and simulations were performed with Virtuoso 6.17 tools (Cadence Design Systems, San Jose, CA, USA) using Spectre models from TS18IS Image Sensor 0.18 μm Process Development Kit (Tower Jazz Semiconductor, Migdal Haemek, Israel).

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