Oxygen vacancy induced electron traps in tungsten doped Bi 2 MoO 6 for enhanced photocatalytic performance

Chang Sun,Zitong Zhao,Hougang Fan,Yanli Chen,Xiaoyan Liu,Jian Cao,Jihui Lang,Maobin Wei,Huilian Liu,Lili Yang

DOI: https://doi.org/10.1039/d1ce00868d

IF: 3.756

2021-01-01

CrystEngComm

Abstract:As the concentration of the W dopant increased in the Bi 2 Mo 1− x W x O 6 nanosheets, the density of the oxygen vacancies became higher, which served as electron trap centers to lower the recombination rate and enhance the photocatalytic performance.

chemistry, multidisciplinary,crystallography