Abstract:Globally, end-of-life photovoltaic (PV) waste is turning into a serious environmental problem. The most possible solution to this issue is to develop technology that allows the reclamation of non-destructive, reusable silicon wafers (Si-wafers). The best ideal techniques for the removal of end-of-life solar (PV) modules is recycling. Since more than 50 000 t of PV modules are anticipated to be worn out by 2025, the recycling strategy has been attracting a lot of interest in recent years. Metal electrodes, anti-reflection coatings, emitter layers, and p-n junctions must be eliminated from the solar cells in order to recover the Si wafers. In this study, we have carried out the etchant HF + H 2 O 2 + CH 3 COOH wet chemical etching methods to selectively recover Silicon wafers from end-of-life Silicon solar cell. A recovered Si wafer with a consistent and smooth surface was generated using this etching technique. The etched recycled wafers had characteristics that were nearly equal to those of commercial virgin wafers. The recycled silicon wafer's thickness was 250 μm, resistivity was 1.6 Ω cm, and minority carrier life time was 2.17 μs, respectively. Additionally, the surface of recycled silicon wafers has an ultralow reflectivity of 12% and commercial silicon wafers had reflectivity of 25%. Finally the end-of-life recycled wafer surface was investigated by X-ray diffraction (XRD), optical microscope, Field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectroscopy (EDX) spectrum. The recycled wafer surface reflectivity was analysed by UV–Visible spectroscopy. The FTIR results indicate the reduction of oxidation in the etched samples (before etch and after etch). These characterizations helped us to understand the structure and properties of the end-of-life solar cell wafer.

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