Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by proximity catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This proximity catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

Sequential growth and twisted stacking of chemical-vapor-deposited graphene

Graphene thickness control via gas-phase dynamics in chemical vapor deposition

The role of etching on growth of adlayer graphene by chemical vapor deposition

Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration

Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene

Raman Spectroscopic Characterization of Stacking Configuration and Interlayer Coupling of Twisted Multilayer Graphene Grown by Chemical Vapor Deposition

Etching-Controlled Growth of Graphene by Chemical Vapor Deposition

Graphene: Layer-Stacking Growth and Electrical Transport of Hierarchical Graphene Architectures (adv. Mater. 20/2014)

Engineering of Chemical Vapor Deposition Graphene Layers: Growth, Characterization, and Properties

Stacking transfer of wafer-scale graphene-based van der Waals superlattices

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Layer-stacking growth and electrical transport of hierarchical graphene architectures.

Growth and Raman Spectra of Single-Crystal Trilayer Graphene with Different Stacking Orientations.

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Achievements and Challenges of Graphene Chemical Vapor Deposition Growth

Stacking Order in Graphite Films Controlled by Van der Waals Technology

Growth of twisted bilayer graphene through two-stage chemical vapor deposition

Porous-structure engineered spacer for high-throughput and rapid growth of high-quality graphene films

Spiral Growth of Adlayer Graphene

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Suppression of nucleation density in twisted graphene domains grown on graphene/SiC template by sequential thermal process