Abstract:Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even metre-scale monolayers of single-crystal graphene (MLG) and hexagonal boron nitride (h-BN) have been achieved by epitaxial growth on various single-crystalline substrates. However, in principle, this success in monolayer epitaxy seems extremely difficult to be replicated to bi- or few-layer growth, as the full coverage of the first layer was believed to terminate the reactivity of those adopting catalytic metal surfaces. Here, we report an exceptional layer-by-layer chemical vapour deposition (CVD) growth of large size bi-layer graphene single-crystals, enabled by self-transmitting catalytic activity from platinum (Pt) surfaces to the outermost graphene layers. In-situ growth and real-time surveillance experiments, under well-controlled environments, unambiguously verify that the growth does follow the layer-by-layer mode on open surfaces of MLG/Pt(111). First-principles calculations indicate that the transmittal of catalytic activity is allowed by an appreciable electronic hybridisation between graphene overlayers and Pt surfaces, enabling catalytic dissociation of hydrocarbons and subsequently direct graphitisation of their radicals on the outermost sp2 carbon surface. This self-transmitting catalytic activity is also proven to be robust for tube-furnace CVD in fabricating single-crystalline graphene bi-, tri- and tetra-layers, as well as h-BN few-layers. Our findings offer an exceptional strategy for potential controllable, layer-by-layer and wafer-scale growth of vertically stacked few-layered 2D single crystals.

Layer-stacking growth and electrical transport of hierarchical graphene architectures.

Graphene: Layer-Stacking Growth and Electrical Transport of Hierarchical Graphene Architectures (adv. Mater. 20/2014)

Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method

Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Graphene Nanoribbons Grown in Hbn Stacks for High-Performance Electronics

Direct Growth of Hbn/graphene Heterostructure Via Surface Deposition and Segregation for Independent Thickness Regulation.

Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Layer-by-layer Growth of Bilayer Graphene Single-Crystals Enabled by Proximity Catalytic Activity

Stacking Relations and Substrate Interaction of Graphene on Copper Foil

Controllable Synthesis and Growth Mechanism of Interlayer-Coupled Multilayer Graphene

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.

Sequential growth and twisted stacking of chemical-vapor-deposited graphene

Growth and Etching of Centimeter-Scale Self-Assembly Graphene–h-BN Super-Ordered Arrays: Implications for Integrated Electronic Devices

Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics

Towards Growth of Pure AB-stacked Bilayer Graphene Single Crystals

Layer-by-layer growth of bilayer graphene single-crystals enabled by self-transmitting catalytic activity

Stacking Order in Graphite Films Controlled by Van der Waals Technology

Crystalline Bilayer Graphene with Preferential Stacking from Ni-Cu Gradient Alloy.

Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway

Temperature-triggered Chemical Switching Growth of In-Plane and Vertically Stacked Graphene-Boron Nitride Heterostructures