Abstract:Silicene, a silicon analogue of graphene, has attracted increasing attention during the past few years. As early as in 1994, the possibility of stage corrugation in the Si analogs of graphite had already been theoretically explored. But there were very few studies on silicene until 2009, when silicene with a low buckled structure was confirmed to be dynamically stable by ab initio calculations. In spite of the low buckled geometry, silicene shares most of the outstanding electronic properties of planar graphene (e.g., the "Dirac cone", high Fermi velocity and carrier mobility). Compared with graphene, silicene has several prominent advantages: (1) a much stronger spin-orbit coupling, which may lead to a realization of quantum spin Hall effect in the experimentally accessible temperature, (2) a better tunability of the band gap, which is necessary for an effective field effect transistor (FET) operating at room temperature, (3) an easier valley polarization and more suitability for valleytronics study. From 2012, monolayer silicene sheets of different superstructures were successfully synthesized on various substrates, including Ag(111), Ir(1 1 I), ZrB2(0001), ZrC(111) and MoS2 surfaces. Multilayer silicene sheets have also been grown on Ag(1 1 1) surface. The experimental successes have stimulated many efforts to explore the intrinsic properties as well as potential device applications of silicene, including quantum spin Hall effect, quantum anomalous Hall effect, quantum valley Hall effect, superconductivity, band engineering, magnetism, thermoelectric effect, gas sensor, tunneling FET, spin filter, and spin FET, etc. Recently, a silicene FET has been fabricated, which shows the expected ambipolar Dirac charge transport and paves the way towards silicene-based nanoelectronics. This comprehensive review covers all the important theoretical and experimental advances on silicene to date, from the basic theory of intrinsic properties, experimental synthesis and characterization, modulation of physical properties by modifications, and finally to device explorations. (C) 2016 Elsevier Ltd. All rights reserved.

Emergent Dirac Fermions in Epitaxial Planar Silicene Heterostructure

Absence And Presence Of Dirac Electrons In Silicene On Substrates

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

Silicene on Substrates: A Theoretical Perspective

Absence of Dirac Electrons in Silicene on Ag (111) Surfaces

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy

Electronic Structure Of Silicene On Ag(111): Strong Hybridization Effects

Substrate-induced half-metallic property in epitaxial silicene

Topological Dirac States Beyond Π Orbitals for Silicene on SiC(0001) Surface

Silicene on Ag(111): an honeycomb lattice without Dirac bands

Does the Dirac Cone Exist in Silicene on Metal Substrates?

Structural Tristability And Deep Dirac States In Bilayer Silicene On Ag(111) Surfaces

Observation of Van Hove Singularities in Twisted Silicene Multilayers.

Rise of Silicene: A Competitive 2d Material

Exploring semiconductor substrates for Silicene epitaxy

Mining Single-Electron Spectra of the Interface States from a Supercell Band Structure of Silicene on an Ag ( 111 ) Substrate with Band-Unfolding Methodology

Epitaxial Growth of a Silicene Sheet

Highly Biaxially Strained Silicene on Au(111)

Strong Band Hybridization Between Silicene and Ag(1 1 1) Substrate

Coexistence of multiple silicene phases in silicon grown on Ag(111)

Electronic Structure and Quasiparticle Bandgap of Silicene Structures