Abstract:This study presents a thermodynamic formalism to predict the type of ultra-thin oxide overgrowth due to dry, thermal oxidation of bare single-crystalline ⟨AlSi⟩\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \langle {\text{AlSi}}\rangle $$\end{document} alloy substrate. The various oxide growth parameters considered in this formulation are Si alloying element content at the alloy/oxide interface, growth temperature, oxide-film thickness (up to 5 nm), and low-index crystallographic surfaces of the alloy substrate. Along with the bulk Gibbs free energies of oxide formation, this developed formalism also considered alloy/oxide interface energies and oxide surface energies. Further for estimating the alloy/oxide interface energies of the crystalline oxide overgrowths, chemical interaction energy and strain energy arising due to the anisotropic growth strain have been taken into account. Similarly, the alloy/oxide interface energies of the amorphous oxides considered contributions arising from chemical interaction, entropy, and enthalpy between the alloy substrate and oxide overgrowth. Overall, the model predicted the stability of amorphous {SiO2} and {Al2O3}\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \{{\text{Al}_{2}} \text{O}_{3}\} $$\end{document} at lower and higher oxide-film thicknesses, respectively, followed by phase transformation of amorphous {Al2O3}\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \{{\text{Al}_{2}} \text{O}_{3}\} $$\end{document} to γ-Al2O3\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ {\gamma } - \left\langle {\text{Al}_{2}} \text{O}_{3} \right\rangle $$\end{document} on further thickening of the oxide film. Moreover, crystalline ⟨SiO2⟩\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \langle {\text{SiO}}_{2} \rangle $$\end{document} was never found to be thermodynamically favorable for the parameters considered in this study. These thermodynamic predictions are found to be in agreement with the experimental findings.

Comparative study of the growth of sputtered aluminum oxide films on organic and inorganic substrates

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

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Shrunk Lattice Structure and Interdiffusion Characteristics of 5 Nm Thick Al(2)O(3) Ultrathin Films Sputtered on Silicon.

The wettability of pure liquid aluminum on oxide substrates

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Stability of ultra-thin oxide overgrowths on binary Al–Si alloy substrate

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

On the Effect of Randomly Oriented Grain Growth on the Structure of Aluminum Thin Films Deposited via Magnetron Sputtering

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]o[sub 3]∕si Interfaces for Advanced Gate Stacks

Characteristics of LaAlO3 Gate Dielectrics on Si Grown by Metalorganic Chemical Vapor Deposition

Nucleation and Growth Study of Al2O3 Film Fabricated Through Atomic Layer Deposition on Pet Substrate

Direct atomic layer deposition of ultrathin aluminium oxide on monolayer $MoS_2$ exfoliated on gold: the role of the substrate

Same Precursor, Two Different Products: Comparing the Structural Evolution of In-Ga-O "Gel-Derived" Powders and Solution-Cast Films Using Pair Distribution Function Analysis

Tunneling spectroscopy studies of aluminum oxide tunnel barrier layers