Abstract:The orthogonal test method is employed to systematically analyze the influence of six operating parameters on the growth rate and non‐uniformity the most favorable combination for achieving the highest growth rate and the most consistent uniformity are identified as A1B1C5D5E5F5 and A2B2C2D3E2F2, respectively. Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high‐quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non‐uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane‐hydrogen (TCS‐H2) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non‐uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non‐uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non‐uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.

Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations

Spatial Batch Optimal Design Based on Self-Learning Gaussian Process Models for LPCVD Processes

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition

Numerical modeling of <i>SiC</i> by low-pressure chemical vapor deposition from methyltrichlorosilane

Atomistic Insights into Chemical Vapor Deposition Process of Preparing Silicon Carbide Materials Using ReaxFF-MD Simulation

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

A Multiscale Model for CVD Growth of Silicon Carbide

Optimizing Plasma Etching: Integrating Precise Three-Dimensional Etching Simulation and Machine Learning for Multi-Objective Optimization

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

Homoepitaxial Chemical Vapor Deposition of up to 150 μm Thick 4H-SiC Epilayers in a 10×100 mm Batch Reactor

Multi-model Simulation of 300 Mm Silicon-Nitride Thin-Film Deposition by PECVD and Experimental Verification

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Feasibility of molecular dynamics simulation for process parameter guidance of silicon nitride thin films by PECVD

Probabilistic physics-integrated neural differentiable modeling for isothermal chemical vapor infiltration process

A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

Insights into the effect of susceptor rotational speed in CVD reactor on the quality of 4H-SiC epitaxial layer on homogeneous substrates

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

Optimization of Operating Parameters in Polysilicon Chemical Vapor Deposition Reactor with Response Surface Methodology

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Numerical Simulation of the Growth Characteristics of Laser Chemical Vapor Deposition of Silicon Carbide