Abstract:Despite much anticipation of valleytronics as a candidate to replace the aging complementary metal-oxide-semiconductor (CMOS) based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all electrically in an electrostatic setting. Here, we propose a class of all-electric-controlled valley filter, valve, and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudomagnetoresistance ratio of over $10\phantom{\rule{0.16em}{0ex}}000$% can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical reversibility in two-input universal Boolean gate. The ($2+1$) polarization states (two distinct valleys plus a null polarization) reestablish one-to-one input-to-output mapping, a crucial requirement for logical reversibility, and significantly reduce the complexity of reversible circuits. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.

Polar Logic XOR/XNOR Circuits Using a Single Current Conveyor

Analysis and Design of Low Power XOR-XNOR Circuits

Polarization-based All-Optical Logic Controlled-Not, XOR, and XNOR Gates Employing Electro-Optic Effect in Periodically Poled Lithium Niobate

Searching the Best Polarity for Low Power Based on WAGA

Reconfigurable Dual-Channel All-Optical Logic Gate in a Silicon Waveguide Using Polarization Encoding.

Polarization-based all-optical logic gates employing electro-optic effect in periodically poled LiNbO 3

Polarity Tunable Complementary Logic Circuits

All-optical NOR and OR Logic Gates Based on Cross-Polarization Modulation in a Semiconductor Optical Amplifier

All-Optical Logic Controlled-Not, And, and or Gates Employing Electro-Optic Effect in Ppln

Novel, low-supply, differential XOR/ XNOR with rail-to-rail swing, for hamming-code generation

Development and analysis of all-optical multipurpose OR, XOR, NAND, AND, NOR, and XNOR logic gates in a single unit using silicon microring resonator

All-Optical Reconfigurable Multi-Logic Gates Based on Nonlinear Polarization Rotation Effect in A Single Soa

Design of High Performance XOR and XNOR Logic Gates without MOS Devices

Valleytronics in Merging Dirac Cones: All-electric-controlled Valley Filter, Valve, and Universal Reversible Logic Gate

Compact all-optical interferometric logic gates based on one-dimensional metal-insulator-metal structures

Stable Universal 1‐ and 2‐Input Single‐Molecule Logic Gates

CMOS-Based Single-Cycle in-Memory XOR/XNOR

Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor.

Directed Xor/Xnor Logic Circuit Implemented by Microring Resonators: Simulation and Demonstration

Metasurface computing components that support dual channel parallel processing and provides full type logic gate options