Abstract:In this work, the uniformity is significantly improved of the photoresist film spinning-coated on the small-size diamond wafer by inlaying the diamond wafer into a 1-inch polytetrafluoroethylene substrate; consequently, the utilizable surface area of the diamond wafer is remarkably increased. As a result, the interdigital electrodes of 2.5 mm × 2.5 mm in dimension are prepared on the single crystal diamond (5 mm × 5 mm × 0.5 mm) and a metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area of 3.093 mm 2 has been fabricated. Compared to the maximum values of the interdigital-typed intrinsic diamond deep-ultraviolet photodetectors, the active area is increased by more than six times, and the photocurrent reaches the order of milliampere, which is about two orders of magnitude larger. Meanwhile, the responsivity and external quantum efficiency are 56.3 A/W and 328, respectively, at 50 V bias under 3.125 μW/mm2 213-nm illumination, and the corresponding mobility-lifetime product of the diamond wafer is 1.11×10 -5 cm 2 /V. As the voltage continued to increase, which still maintained an upward trend and did not appear saturated; the corresponding responsivity is up to 275.9 A/W at 120 V. In addition, the ultraviolet-visible light discrimination ratio is 1.4×10 4 at 10 V, and the carrier transit time between interdigital electrodes is measured to be only about 1 ns (excited by a 213-nm pulse laser), which shows that the photodetector has an ultrafast response speed.

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Fabrication and characterization of a new type 4 × 4 arrayed position sensitive detector

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Performance of Metal-Semiconductor-Metal Structured Diamond Deep-Ultraviolet Photodetector with a Large Active Area

Ultrahigh-performance solar-blind photodetectors based on individual single-crystalline In₂Ge₂O₇ nanobelts.

Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging

Fabrication of ZnSnO3 single crystal films on sapphire substrates by pulsed laser deposition for solar-blind photodetectors

Ultra‐High Performance Amorphous Ga 2 O 3 Photodetector Arrays for Solar‐Blind Imaging

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Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga 2 O 3 nanowire arrays

Boosting the performance of deep-ultraviolet photodetector arrays based on phase-transformed heteroepitaxial β-Ga2O3 films for solar-blind imaging

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

Solar-Blind Photodetector Arrays Fabricated by Weaving Strategy