Charge transfer and spin-valley locking in 4Hb-TaS 2

Avior Almoalem,Roni Gofman,Yuval Nitzav,Ilay Mangel,Irena Feldman,Jahyun Koo,Federico Mazzola,Jun Fujii,Ivana Vobornik,J. S´anchez-Barriga,Oliver J. Clark,Nicholas Clark Plumb,Ming Shi,Binghai Yan,Amit Kanigel

DOI: https://doi.org/10.1038/s41535-024-00646-2

IF: 6.856

2024-04-11

npj Quantum Materials

Abstract:4Hb-TaS 2 is a superconductor that exhibits unique characteristics such as time-reversal symmetry breaking, hidden magnetic memory, and topological edge modes. It is a naturally occurring heterostructure comprising of alternating layers of 1H-TaS 2 and 1T-TaS 2 . The former is a well-known superconductor, while the latter is a correlated insulator with a possible non- trivial magnetic ground state. In this study, we use angle resolved photoemission spectroscopy to investigate the normal state electronic structure of this unconventional superconductor. Our findings reveal that the band structure of 4Hb-TaS 2 fundamentally differs from that of its constituent materials. Specifically, we observe a significant charge transfer from the 1T layers to the 1H layers that drives the 1T layers away from half-filling. In addition, we find a substantial reduction in inter-layer coupling in 4Hb-TaS 2 compared to the coupling in 2H-TaS 2 that results in a pronounced spin-valley locking within 4Hb-TaS 2 .

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology

What problem does this paper attempt to address?

The paper primarily investigates the electronic structure characteristics of the special material 4Hb-TaS2 and its impact on superconducting properties. 4Hb-TaS2 is a naturally occurring heterostructure composed of alternating layers of 1H-TaS2 (a known superconductor) and 1T-TaS2 (a correlated insulator with a potentially non-trivial magnetic ground state). The study explores the electronic structure of this unconventional superconductor in its normal state using Angle Resolved Photoemission Spectroscopy (ARPES).

The main findings include:

1. **Charge Transfer**: There is significant charge transfer from the 1T layer to the 1H layer, which drives the 1T layer away from the half-filled state. This charge transfer alters the band structure of the material, with the inner pocket of the 1H layer along the K-M-K' line being about 100 meV deeper than that of 2H-TaS2. Additionally, new shallow electron pockets were discovered, with a Fermi energy of approximately 50 meV.

2. **Weakened Interlayer Coupling**: Compared to 2H-TaS2, the coupling between the 1H layers in 4Hb-TaS2 is significantly weakened, resulting in the absence of a gap at the M point, similar to the monolayer case. By comparing the ARPES data of the two materials, the researchers estimated the interlayer coupling strength and found that the coupling in 4Hb-TaS2 is almost negligible.

3. **Spin-Valley Locking**: Due to the disappearance of interlayer coupling and the presence of strong spin-orbit coupling, a pronounced spin-valley locking phenomenon appears in 4Hb-TaS2. This locking is very significant in 4Hb-TaS2, whereas it has not been observed in 2H-TaS2. Spin-valley locking is crucial for understanding the Ising superconducting behavior in 4Hb-TaS2.

In summary, the paper reveals the unique electronic structure characteristics of 4Hb-TaS2, which may be related to its unconventional superconducting properties. By conducting a comparative analysis of the electronic structures of 4Hb-TaS2 and 2H-TaS2, the researchers provide important insights into the physical properties of these two materials.