Emergence of Strong-Coupling Superconductivity and Quantum Criticality Correlated with Lifshitz Transitions in the Alternate Stacking Compound 4Hb−tas2

Shuxiang Xu,Junze Deng,Jingjing Gao,Fanyu Meng,Lifen Shi,Pengtao Yang,Ningning Wang,Ziyi Liu,Jianping Sun,Yoshiya Uwatoko,Hechang Lei,Xuan Luo,Yuping Sun,Nanlin Wang,Zhijun Wang,Bosen Wang,Jinguang Cheng
DOI: https://doi.org/10.1103/physrevb.109.144522
IF: 3.7
2024-01-01
Physical Review B
Abstract:4 H b -TaS 2 is a naturally formed quasi -two-dimensional heterojunction material composed of alternating monolayers of insulating (1 T -) and superconducting (1 H -) TaS 2 . We report on a comprehensive high-pressure study on the interplay between charge -density wave (CDW) and superconductivity (SC) in 4 H b -TaS 2 . The results uncover a dome -shaped strong -coupling superconductor on the border of a 3 x 3 commensurate CDW at P c1 approximate to 2 . 0 GPa: (1) nearly one order enhancement of upper critical field B c 2 (0); (2) the derived 2 4 0 / k B T c beyond the BCS theory, decaying to a conventional one above 4.5 GPa; (3) the exponent of normal -state resistivity n approximate to 1 . 50 and triply enhanced electronic effective mass. Under pressure, a third CDW emerging from 2.0 GPa is related to the original two CDWs, then disappears above 11.5 GPa. The temperature dependence of B c 2 ( T ) collapses into a universal curve and the comparison of B c 2 ( T ) to a polar -state function in 4 H b -TaS 2 . Theoretical calculations proposed the stronger interlayer coupling and band hybridization responsible for strong -coupling SC; the suppression of new CDWs is related to band inversions between the 1 T -Ta- d xy (GM1 + ) and S- p z bands (GM2-) at the P A point; above 5.0 GPa, the coexisting weak -coupling SC and linear magnetoresistance can be attributed to the formation of electronic bands along the M - K lines and the P A point. Our discovery provides an excellent example to demonstrate the interplay of the strong -coupling superconducting state and topological electronic state in van der Waals heterojunctions.
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