Charge transfer and Spin-Valley locking in 4Hb-TaS$_{2}$

Avior Almoalem,Roni Gofman,Yuval Nitzav,Ilay Mangel,Irena Feldman,Jahyun Koo,Federico Mazzola,Jun Fujii,Ivana Vobornik,J. Sanchez-Barriga,Oliver J. Clark,Nicholas Clark Plumb,Ming Shi,Binghai Yan,Amit Kanigel
2024-05-26
Abstract:4Hb-TaS$_2$ is a superconductor that exhibits unique characteristics such as time-reversal symmetry breaking, hidden magnetic memory, and topological edge modes. It is a naturally occurring heterostructure comprising of alternating layers of 1H-TaS$_2$ and 1T-TaS$_2$. The former is a well-known superconductor, while the latter is a correlated insulator with a possible non-trivial magnetic ground state. In this study, we use angle resolved photoemission spectroscopy to investigate the normal state electronic structure of this unconventional superconductor. Our findings reveal that the band structure of 4H-TaS$_2$ fundamentally differs from that of its constituent materials. Specifically, we observe a significant charge transfer from the 1T layers to the 1H layers that drives the 1T layers away from half-filling. In addition, we find a substantial reduction in inter-layer coupling in 4Hb-TaS$_2$ compared to the coupling in 2H-TaS$_2$ that results in a pronounced spin-valley locking within 4Hb-TaS$_2$
Superconductivity,Strongly Correlated Electrons
What problem does this paper attempt to address?
This paper primarily investigates the electronic structure characteristics of the 4Hb-TaS₂ material and its impact on superconducting properties. Specifically, the research team explored the charge transfer between different layers in 4Hb-TaS₂ and the changes in interlayer coupling strength using angle-resolved photoemission spectroscopy (ARPES) technology. They also analyzed how these changes affect the spin-valley locking effect in the material. ### Main Findings 1. **Charge Transfer**: The study found significant charge transfer from the 1T layer to the 1H layer. This charge transfer leads the 1T layer to approach a half-filled state, thereby excluding the possibility of Mott insulator physics in 4Hb-TaS₂. However, some new shallow electron pockets were observed near the Γ point, the origin of which remains unclear. 2. **Weakened Interlayer Coupling**: Compared to 2H-TaS₂, the interlayer coupling in the 1H layers of 4Hb-TaS₂ is significantly weakened. This suggests that 4Hb-TaS₂ can be viewed as stacked 2D 1H superconducting layers separated by 1T layers. This characteristic helps explain the increased critical temperature (Tc) in 4Hb-TaS₂. 3. **Spin-Valley Locking**: The study also revealed a strong spin-valley locking effect in 4Hb-TaS₂, which was not observed in 2H-TaS₂. Spin-valley locking may be related to the Ising superconductivity exhibited by 4Hb-TaS₂. ### Discussion The research results are significant for understanding the superconducting mechanism of 4Hb-TaS₂. In particular, the weakening of interlayer coupling and the presence of spin-valley locking provide clues to explain the unconventional superconducting properties of 4Hb-TaS₂. Additionally, the paper discusses the impact of experimental details on spin polarization measurements and future research directions aimed at further exploring the relationship between the electronic structure and superconducting properties of 4Hb-TaS₂. In summary, this study reveals the unique electronic structure characteristics of 4Hb-TaS₂ and explores how these characteristics affect the material's superconducting behavior. This is crucial for deepening our understanding of such complex materials.