Microstructured Porous Pyramid-Based Ultrahigh Sensitive Pressure Sensor Insensitive to Strain and Temperature

Jun Chang Yang,Jin-Oh Kim,Jinwon Oh,Se Young Kwon,Joo Yong Sim,Da Won Kim,Han Byul Choi,Steve Park
DOI: https://doi.org/10.1021/acsami.9b03261
2019-05-06
Abstract:An ultrahigh sensitive capacitive pressure sensor based on a porous pyramid dielectric layer (PPDL) is reported. Compared to that of the conventional pyramid dielectric layer, the sensitivity was drastically increased to 44.5 kPa<sup>–1</sup> in the pressure range &lt;100 Pa, an unprecedented sensitivity for capacitive pressure sensors. The enhanced sensitivity is attributed to a lower compressive modulus and larger change in an effective dielectric constant under pressure. By placing the pressure sensors on islands of hard elastomer embedded in a soft elastomer substrate, the sensors exhibited insensitivity to strain. The pressure sensors were also nonresponsive to temperature. Finally, a contact resistance-based pressure sensor is also demonstrated by chemically grafting PPDL with a conductive polymer, which also showed drastically enhanced sensitivity.
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?