Comprehensive Analysis of Lead-Free Perovskite (CsSn0.5Ge0.5I3) Solar Cell: Impact of Active Layer Thickness and Defect Density

Sarita Yadav,Saral K Gupta,C. M. S. Negi
DOI: https://doi.org/10.1007/s13538-024-01444-8
2024-02-29
Brazilian Journal of Physics
Abstract:Here, we elucidate the influence of active layer thickness and defect density on the photovoltaic performance of lead-free CsSn 0.5 Ge 0.5 I 3 perovskite solar cells (PSCs). We explained the dependence of FF and J SC on the perovskite layer thickness and defect density in terms of the extraction rate and generation rate, identifying the role of charge extraction and recombination in the operation of perovskite solar cells. Our finding revealed that when active layer thickness was varied, the best performance was achieved with a thickness of 0.4 μm, resulting in a PCE of 12.79%, open circuit voltage (V OC ) of 0.807 V, FF of 77.42%, and J SC of 20.47 mA/cm 2 for the CsSn 0.5 Ge 0.5 I 3 -based PSC. Additionally, the impact of defect density on PSC performance was assessed using the Shockley–Read–Hall recombination model. The degradation of photovoltaic performance was evident as trap density increased, with the PCE dropping from 14.38 to 5.47%. V OC experienced a significant reduction of 40%, while J SC and FF showed drops of 25.3% and 14.6%, respectively. The study emphasizes the importance of optimizing active layer thickness and minimizing trap densities to enhance the performance of lead-free PSCs.
physics, multidisciplinary
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