Abstract:Two-dimensional (2D) MXenes, having comparable transport properties like graphene and a wide spectrum application, are often limited to being used in optoelectronics due to metallic bandgap. Here, by employing density functional theory we report the bandgap engineering and tuning optoelectronic properties through modulating the anions of novel 2D spinel Hf3X2O2 (X = N, P and As) MXenes structures and show that the material class can be among the few semiconducting MXenes. Phonon spectra and cohesive energies confirm that these structures are dynamically stable and chemically exothermic. Modulating anions X = N, P, and As in Hf3X2O2, the electronic bandgaps are found ∼0.46 eV for N, metallic for P, and ∼48 meV for As atoms, suggesting the semiconducting, metallic, and semi-metallic MXenes. The biaxial strains are incorporated to tune the features: In the Hf3N2O2 structure, the bandgap is increased with both compressive and tensile strains, while for the Hf3As2O2 structure, the gap decreased at the GGA-PBE level. For Hf3P2O2 structures, the bandgaps are all metallic irrespective of pristine or biaxial strain. Spin–orbit coupling SOC+GGA reveals that Hf3N2O2 is highly spin responsive while Hf3As2O2 shows semi-metal-to-metallic bandgap transition for pristine as well as biaxial strained conditions. From optical properties analysis, optical absorptions are found located in the visible spectral regions that are also highly receptive to biaxial strains. These properties we have unleashed for the novel Hf3X2O2 (X = N, P, As) semiconducting MXene, thus, show the potentiality of the utilization of the material class in nanoelectronics and optoelectronics applications.

What problem does this paper attempt to address?

### Problems the paper attempts to solve This paper aims to solve the problem of how to achieve band - gap engineering and enhance optical properties by adjusting anions in the new two - dimensional (2D) MXene structure Hf₃X₂O₂ (X = N, P, As) through first - principles research. Specifically, the paper focuses on the following aspects: 1. **Band - gap engineering**: - Research the influence of different anions (N, P, As) on the electronic band - gap of the Hf₃X₂O₂ structure. - Explore the modulation of the band - gaps of these structures through biaxial strain to achieve the transition from an indirect band - gap to a direct band - gap. 2. **Dynamic stability and chemical stability**: - Verify the dynamic and chemical stabilities of these structures by calculating the phonon spectra and binding energy. 3. **Electronic properties**: - Analyze the influence of different anions and biaxial strain on the electronic band - structure and density of states (DOS) of the Hf₃X₂O₂ structure. - Consider the spin - orbit coupling (SOC) effect and further explore its influence on the band - gap. 4. **Optical properties**: - Research the optical absorption and reflection characteristics of the Hf₃X₂O₂ structure in the visible spectral range. - Explore the influence of biaxial strain on the optical properties. ### Main findings 1. **Band - gap modulation**: - The band - gap of the Hf₃N₂O₂ structure is approximately 0.46 eV, which is a semiconductor. - The band - gap of the Hf₃P₂O₂ structure is metallic. - The band - gap of the Hf₃As₂O₂ structure is approximately 48 meV, which is a semi - metal. - Biaxial strain can significantly modulate the band - gaps of these structures. For example, Hf₃N₂O₂ achieves the transition from an indirect band - gap to a direct band - gap under 6% tensile strain. 2. **Dynamic stability and chemical stability**: - Phonon spectra and binding energy calculations show that these structures have good dynamic and chemical stabilities. 3. **Electronic properties**: - The valence band maximum (VBM) of Hf₃N₂O₂ is located at the Γ point, and the conduction band minimum (CBM) is located at the M* point. - The VBM of Hf₃As₂O₂ is located at the K point, and the CBM is located at the K* point. - The spin - orbit coupling (SOC) effect has a significant influence on the band - gap of Hf₃N₂O₂, reducing it from 0.46 eV to 0.28 eV. 4. **Optical properties**: - Hf₃N₂O₂ shows strong optical absorption in the visible spectral range, and the highest absorption coefficient appears at approximately 530 nm. - Hf₃As₂O₂ shows the highest absorption coefficient in the visible spectral range, while Hf₃N₂O₂ shows the lowest reflectivity. - Biaxial strain has a significant influence on the optical properties, especially in the visible spectral range. ### Conclusion By adjusting anions and introducing biaxial strain, the band - gaps and optical properties of the Hf₃X₂O₂ (X = N, P, As) structures can be effectively modulated. These findings provide theoretical support for the potential uses of these materials in nanoelectronics and photoelectric applications.

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