An InGaP/GaAs HBT power amplifier for 4.9–5.9 GHz Wireless-LAN applications

Liang Huang,Zhi-hao Zhang,Gary Zhang,Sizhen Li
DOI: https://doi.org/10.1109/ICSICT.2014.7021517
2014-10-01
Abstract:This paper presents an InGaP/GaAs HBT power amplifier (PA) for mobile terminals used in 4.9-5.9 GHz broadband wireless applications. The PA consists of a 3-stage structure for high gain. The inter-stage matching networks, which based on an analysis of a novel matching theory, were designed for efficiency and wideband. The output matching network was designed to have a reduced insertion loss and wideband operation. The fabricated PA achieved 26 dB small signal gain with less than 1 dB variation over the frequency range of 4.9-5.9 GHz. The PA also exhibited linear output power levels of 20.5 and 19.5 dBm at EVM values of 5.0% at 4.9GHz and 5.4GHz, respectively, measured with 54 Mb/s 64-QAM-OFDM signals at a supply voltage of 3.4 V.
Engineering
What problem does this paper attempt to address?