A 2.2kV Organic Semiconductor- Based Lateral Power Device

Jun Zhang,Jiayi Zhou,Yuhao Wang,Man Li,Ling Du,Jing Chen,Maolin Zhang,Jiafei Yao,Guobin Zhang,Huabin Sun,Yong Xu,Song Bai,Yufeng Guo
DOI: https://doi.org/10.1109/led.2021.3135699
IF: 4.8157
2022-02-01
IEEE Electron Device Letters
Abstract:The application of organic field-effect transistors (OFETs) in the power device realm has not been explored yet. To achieve a high breakdown voltage, a novel lateral drift region OFET(LDR-OFET) is proposed in this letter. By employing the diketopyrrolopyrrole-based polymer(DPPT-TT) and Poly (methyl methacrylate) (PMMA) to form semiconductor and insulator layers respectively, the fabricated LDR-OFET, despite the simple process and low cost, exhibits an excellent off-state breakdown capability while maintaining a considerable on-state performance. With a $20~mu ext{m}$ length of the drift region, the LDR-OFET realizes 2200V breakdown voltage on a spin-coated 50nm thick semiconductor layer. The average electric field of the proposed device reaches 1.18MV/cm before an avalanche-like breakdown occurs. The physical nature of the breakdown mechanism is explored using the 1-D PIN equivalent structure and avalanche breakdown theory. The correctness and effectiveness of the proposed LDR-OFET and breakdown analysis are well demonstrated and validated by experimental results. The LDR-OFETs are expected to fill the blank of organic power devices and be the core component of future organic power integrated circuits.
engineering, electrical & electronic
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