Abstract:We investigate the effect of oxygen vacancies and hydrogen dopants at the surface and inside slabs of LaAlO3, SrTiO3, and LaAlO3/SrTiO3 heterostructures on the electronic properties by means of electronic structure calculations as based on density functional theory. Depending on the concentration, the presence of these defects in LaAlO3 slab can suppress the surface conductivity. In contrast, in insulating SrTiO3 slabs already very small concentrations of oxygen vacancies or hydrogen dopant atoms induce a finite occupation of the conduction band. Surface defects in insulating LaAlO3/SrTiO3 heterostructure slabs with three LaAlO3 overlayers lead to the emergence of interface conductivity. Calculated defect formation energies reveal strong preference of hydrogen dopant atoms for surface sites for all structures and concentrations considered. Strong decrease of the defect formation energy of hydrogen adatoms with increasing thickness of the LaAlO3 overlayer and crossover from positive to negative values, taken together with the metallic conductivity induced by hydrogen adatoms, seamlessly explains the semiconductor-metal transition observed for these heterostructures as a function of the overlayer thickness. Moreover, we show that the potential drop and concomitant shift of (layer resolved) band edges is suppressed for the metallic configuration. Finally, magnetism with stable local moments, which form atomically thin magnetic layers at the interface, is generated by oxygen vacancies either at the surface or the interface, or by hydrogen atoms buried at the interface. In particular, oxygen vacancies in the TiO2 interface layer cause drastic downshift of the 3d e_g states of the Ti atoms neighboring the vacancies, giving rise to strongly localized magnetic moments, which add to the two-dimensional background magnetization.

Nonlocal Piezoresponse of LaAlO3/SrTiO3 Heterostructures

Electromechanical Response from LaAlO3/SrTiO3 Heterostructures

Electro-Mechanical Response of Top-Gated LaAlO3/SrTiO3 Heterostructures

The Role of Magnetoelastic Strain on Orbital Control and Transport Properties in an LaTiO3–CoFe2O4heterostructure

Scanning Probe Manipulation of Magnetism at the LaAlO3/SrTiO3 Heterointerface.

Locally Enhanced Conductivity Due to the Tetragonal Domain Structure in Laalo3/Srtio3 Heterointerfaces

Tuning Interfacial Magnetic Ordering Via Polarization Control in Ferroelectric SrTiO3/PbTiO3 Heterostructure.

Spin-Dependent Transport Across Co/Laalo3/Srtio3 Heterojunctions

Piezo-Strain Induced Non-Volatile Resistance States In (011)-La2/3sr1/3mno3/0.7pb(Mg2/3nb1/3)O-3-0.3pbtio(3) Epitaxial Heterostructures

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Room temperature surface piezoelectricity in SrTiO3 ceramics via piezoresponse force microscopy

Huge Piezoelectric Response of LaN-based Superlattices

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces

Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface

Room-Temperature Electronically-Controlled Ferromagnetism at the LaAlO3/SrTiO3 Interface

Evidence of field induced inter-ferroelectric transformation as the dominant driving mechanism for anomalous piezoresponse in the morphotropic phase boundary piezoelectric system PbTiO3-BiScO3

The influence of the local oxygen vacancy concentration on the piezoresponse of strontium titanate thin films

Magnetoelectric response analysis of the piezoelectric/piezomagnetic thin-film heterostructure derived by low energy cluster beam deposition

Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering

Oxygen vacancies and hydrogen doping in LaAlO3/SrTiO3 heterostructures: electronic properties and impact on surface and interface reconstruction

In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure