Piezo-Strain Induced Non-Volatile Resistance States In (011)-La2/3sr1/3mno3/0.7pb(Mg2/3nb1/3)O-3-0.3pbtio(3) Epitaxial Heterostructures

yuanjun yang,z l luo,m m yang,haoliang huang,haibo wang,j bao,guoqiang pan,cy gao,qiang hao,shutong wang,m jokubaitis,wenzhe zhang,gang xiao,yiping yao,yukuai liu,x g li
DOI: https://doi.org/10.1063/1.4788723
IF: 4
2013-01-01
Applied Physics Letters
Abstract:The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O-3-0.3PbTiO(3) (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are achieved by properly reversing the electric field from the depolarized direction in ferroelectric PMN0.7PT0.3 substrate. The non-volatile resistance states of the LSMO film can be manipulated by applied electric-field pulse sequence as a result of the large coupling between the electronic states of LSMO film and the strain transferred from the ferroelectric substrate. The electrically tunable, non-volatile resistance states observed exhibit potential for applications in low-power-consumption electronic devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788723]
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