Microstructure, Mechanical and Tribological Properties of High-Entropy Carbide (MoNbTaTiV)C5

Shubo Zhang,Falian Qin,Maoyuan Gong,Zihao Wu,Meiling Liu,Yuhong Chen,Wanxiu Hai
DOI: https://doi.org/10.3390/ma16114115
IF: 3.4
2023-06-01
Materials
Abstract:High-entropy carbide (NbTaTiV)C4 (HEC4), (MoNbTaTiV)C5 (HEC5), and (MoNbTaTiV)C5-SiC (HEC5S) multiphase ceramics were prepared by spark plasma sintering (SPS) at 1900 to 2100 °C, using metal carbide and silicon carbide (SiC) as raw materials. Their microstructure, and mechanical and tribological properties were investigated. The results showed that the (MoNbTaTiV)C5 synthesized at 1900–2100 °C had a face-centered cubic structure and density higher than 95.6%. The increase in sintering temperature was conducive to the promotion of densification, growth of grains, and diffusion of metal elements. The introduction of SiC helped to promote densification but weakened the strength of the grain boundaries. The average specific wear rates for HEC4 were within an order of magnitude of 10−5 mm3/N·m, and for HEC5 and HEC5S were within a range of 10−7 to 10−6 mm3/N·m. The wear mechanism of HEC4 was abrasion, while that of HEC5 and HEC5S was mainly oxidation wear.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
What problem does this paper attempt to address?
The paper mainly discusses the preparation, microstructure, mechanical and frictional wear properties of high-entropy carbide (MoNbTaTiV) C5. Researchers used spark plasma sintering (SPS) technology with a temperature range of 1900 to 2100℃ and metal carbides as raw materials to fabricate this multiphase ceramic. They found that with increasing sintering temperature, the material's density, grain growth, and diffusion of metal elements were promoted. The addition of SiC helped to improve density but weakened the grain boundary strength. The high-entropy carbide (MoNbTaTiV) C5 mentioned in the paper exhibited a face-centered cubic structure after sintering, with a density exceeding 95.6%. The average specific wear rate of HEC4 was approximately 10^-5mm^3/N·m, while HEC5 and HEC5S ranged from 10^-7 to 10^-6mm^3/N·m. The wear mechanism of HEC4 was mainly abrasion, while HEC5 and HEC5S were primarily caused by oxidative wear. The experimental results indicate that increasing the sintering temperature and introducing SiC can improve the density and strength of high-entropy carbides. HEC5S (containing 10% SiC) exhibited better fracture toughness and wear resistance. These findings are significant for the development of high-temperature structural components and wear-resistant materials.