Impact on the structural and photophysical properties of TiO2 films owing to Li implantation

Sulakshana Mondal,Amaresh Das,Durga Basak
DOI: https://doi.org/10.1007/s10854-024-13926-1
2024-11-29
Journal of Materials Science Materials in Electronics
Abstract:We investigated here the effect of defects on the structural and photophysical properties of TiO 2 films implanted with Li ions with fluences from 1 × 10 14 to 1 × 10 15 ions/cm 2 . All the films showed tetragonal anatase structure but higher angle shift of the (101) peak of implanted films confirms Li doping in Ti site. This result is also supported by our X-Ray photoelectron spectroscopy study. The results also indicated that with an increase in Li ion fluence, formation of defects like oxygen vacancy and/or Ti 3+ species increases in implanted samples. This is also supported by theoretical "stopping and range of ions in matter" (SRIM) simulations. The introduction of oxygen vacancy-Ti 3+ defects act as recombination centers which gives rise to significant change in emission properties and decrease the photoresponse properties of the TiO 2 films after Li implantation.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
What problem does this paper attempt to address?