Defects assisted structural and electrical properties of Ar ion irradiated TiO2/SrTiO3 bilayer

Anuradha Bhogra,Anha Masarrat,Dilruba Hasina,Ramcharan Meena,Ashish Kumar,Tapobrata Som,Chung-Li Dong,Chi-Liang Chen,Asokan Kandasami
DOI: https://doi.org/10.1016/j.matlet.2020.128880
IF: 3
2021-01-01
Materials Letters
Abstract:The present study focuses on the effect of 1 MeV Ar ion irradiation on pulsed laser deposited TiO2/SrTiO3 bilayer thin films on Si (100) and SrTiO3 (STO) substrates. Irradiation results in the reduction of crystallinity and the bilayer film on Si exhibits higher electrical conductivity compared to film on STO with the Seebeck coefficient ~175 µV/K and the power factor ~0.13 mW.m−1K−2 at 420 K. The X-ray absorption spectra at Ti L and O K-edges reveal the reduction of the ion valence of Ti and the presence of oxygen vacancies. This study evidences that Ar ion irradiation enhances the electrical and thermoelectric properties in heterostructure oxides due to oxygen vacancies.
materials science, multidisciplinary,physics, applied
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