Abstract:Molybdenum disulfide (MoS2) as a typical two-dimensional (2D) transition-metal dichalcogenide exhibits great potential applications for the next-generation nanoelectronics such as photodetectors. However, most MoS2-based photodetectors hold obvious disadvantages including a narrow spectral response in the visible region, poor photoresponsivity, and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS2/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS2 and very thin n-type GaN flakes. Thanks to the good crystal quality of the 2D-GaN flake and the built-in electric field in the interface depletion region of the MoS2/GaN p–n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes toward the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is seven times faster than pristine MoS2 flake. Additionally, the response spectrum of the photodetector is also broadened to the UV region with a high photoresponsivity of 27.1 A/W and a fast response time of 300 ms after integrating with the 2D-GaN flake, exhibiting an advantageous synergetic effect. These excellent performances render MoS2/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c11021?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c11021</a>.SEM images and thickness distribution of the Ga2O3 flakes; SEM images, thickness distribution, optical image, and photoresponse performance of the GaN flakes; AFM image and photoresponse curves of the MoS2/GaN heterostructure; XRD, optical image, Raman spectrum, AFM image, and electrical and optoelectrical characterizations of the p-MoS2 flake; and tables comparing the photoresponse performance of the MoS2/GaN heterostructure photodetector with that of other MoS2-based photodetectors (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c11021/suppl_file/am0c11021_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Nanolayered Tamm Plasmon-Based Multicolor Hot Electron Photodetection for O- and C-Band Telecommunication

Planar Hot-Electron Photodetector Utilizing High Refractive Index MoS2 in Fabry–Pérot Perfect Absorber

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Low-Noise Te/MoTe2 Heterojunction Waveguide-Integrated Photodetector

Hot-Electron Photodetector With Wavelength Selectivity In Near-Infrared Via Tamm Plasmon

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Exploring the potential of broadband Tamm plasmon resonance for enhanced photodetection

Silicon-based planar devices for narrow-band near-infrared photodetection using Tamm plasmons

Enhancing Hot-Electron Photodetection of a TiO2/Au Schottky Junction by Employing a Hybrid Plasmonic Nanostructure

Self-Patterned CsPbBr<sub>3</sub> Nanocrystal Based Plasmonic Hot-Carrier Photodetector at Telecommunications Wavelengths

Near-infrared Tunable Tamm Plasmons High-Performance Hot Electron Photodetector Based on Ag/Ge2Sb2Te5 Low Schottky Barrier

Grating-assisted hot-electron photodetectors for S- and C-band telecommunication

Tamm-surface Plasmon Resonances from Nanograting-Coupled Plasmonic-Photonic Multilayer Structure for an Integrated Fiber-Optic Sensing Application

Telecom-Band Waveguide-Integrated MoS 2 Photodetector Assisted by Hot Electrons

Broadband Self-powered MoS2/PdSe2/WSe2 PSN Heterojunction Photodetector for High-Performance Optical Imaging and Communication

Optimization of NC-LSPR Coupled MoS2 Phototransistors for High-Performance Broad-Spectrum Detection

Plasmonic hot-electron photodetection with quasi-bound states in the continuum and guided resonances

Tamm plasmon polariton based planar hot electron photodetector for near-infrared region

Design and Integration of a Layered MoS 2 /GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Vertically Stacked Au/PbS/CsPbCl 3 Phototransistors for Plasmon-Enhanced High-Performance Broadband Photodetection

Telecom-Band Waveguide-Integrated MoS2 Photodetector Assisted by Hot Electrons