Large Transverse and Longitudinal Magneto‐Thermoelectric Effect in Polycrystalline Nodal‐Line Semimetal Mg 3 Bi 2

Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu

DOI: https://doi.org/10.1002/adma.202200931

IF: 29.4

2022-04-04

Advanced Materials

Abstract:Advanced Materials, Accepted Article.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

Giant transverse thermoelectric effect induced by topological transition in polycrystalline Dirac semimetal Mg3Bi2

Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu

DOI: https://doi.org/10.1039/d2ee03924a

2023-02-10

Energy and Environmental Sciences

Abstract:To achieve thermoelectric energy conversion, a large transverse thermoelectric effect in topological materials is crucial. However, a simple and effective way to manipulate the performance of transverse thermoelectric materials still remains elusive. Herein, we demonstrate a topological transition-induced giant transverse thermoelectric effect in polycrystalline Mn-doped Mg3+δBi2 material, which has a competitively large transverse thermopower (617 μV⁄K), power factor (20393 μWm−1K−2), magnetoresistance (16600%), and electronic mobility (35280 cm2V−1s−1). The high performance is triggered by the modulation of chemical pressure and disorder effects in the presence of Mn doping, which induces the transition from a topological insulator to a Dirac semimetal. The high-performance polycrystalline Mn-doped Mg3+δBi2 described in this work robustly boosts transverse thermoelectric effect through topological phase transition, paving a new avenue for the material design of transverse thermoelectricity.

energy & fuels,chemistry, multidisciplinary,engineering, chemical,environmental sciences
A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2

Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu

DOI: https://doi.org/10.48550/arXiv.2211.10729

2022-11-19

Materials Science

Abstract:To achieve thermoelectric energy conversion, a large transverse thermoelectric effect in topological materials is crucial. However, the general relationship between topological electronic structures and transverse thermoelectric effect remains unclear, restricting the rational design of novel transverse thermoelectric materials. Herein, we demonstrate a topological transition-induced giant transverse thermoelectric effect in polycrystalline Mn-doped Mg3+{\delta}Bi2 material, which has a competitively large transverse thermopower (617 uV/K), power factor (20393 uWm-1K-2), magnetoresistance (16600%), and electronic mobility (35280cm2V-1S-1). The high performance is triggered by the modulation of chemical pressure and disorder effects in the presence of Mn doping, which induces the transition from a topological insulator to a Dirac semimetal. The high-performance polycrystalline Mn-doped Mg3+{\delta} Bi2 described in this work robustly boosts transverse thermoelectric effect through topological phase transition, paving a new avenue for the material design of transverse thermoelectricity.
High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Qi-Qi Wang,Ke-Feng Liu,Yuan-Yuan Su,Xiao-Cun Liu,Qian Liu,Shun Zhou,Jian Liu,Sheng-Qing Xia

DOI: https://doi.org/10.1016/j.actamat.2023.119028

IF: 9.4

2023-08-01

Acta Materialia

Abstract:Layered high-performing Mg3Bi2-based materials which made from nontoxic and earth-abundant elements have been considered as a promising thermoelectric candidate for low-grade energy recycling. High-quality compositionally controllable Mg3Bi2-based single crystals are grown using modified Bridgman method. The anisotropy of in- and out of plane in high-quality Mg3Bi1.49Sb0.5Te0.01 bulk single crystals are clearly characterized, record high ZT of ∼0.9 at 300 K as well as excellent ZT avg of 1.26 in the temperature range of 300-523 K are achieved along ab-plane, both of which rank as top values among the reported literature. Owing to the higher mobility (266 vs 189 cm2·V−1·s−1), the electrical conductivity along ab-plane is about 25% larger than that along c-axis at room temperature. Besides, Seebeck coefficient and lattice thermal conductivity are insensitive to the direction, resulting in anisotropy of thermoelectric performance but smaller than van der Waals layered materials. Compared with parent Mg3Bi1.5Sb0.5, both carrier concentration and mobility are significant improved with quantitative Te doping, leading to greatly enhanced power factor. With in-depth investigations of anisotropy, the results presented here will advance the fundamental understanding of Mg3Bi2-based system and suggest new ideas on design of the state-of-art thermoelectric materials with high performance.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Feng Jiang,Tao Feng,Yongbin Zhu,Zhijia Han,Rui Shu,Chen Chen,Yiwen Zhang,Chengliang Xia,Xinzhi Wu,Hulei Yu,Chengyan Liu,Yue Chen,Weishu Liu

DOI: https://doi.org/10.1016/j.mtphys.2022.100835

IF: 11.021

2022-10-01

Materials Today Physics

Abstract:Mg3Sb2-based thermoelectric materials have attracted much interest since the discovery of their excellent n-type thermoelectric performance with excess Mg content and proper dopant. Herein, we proposed a doping diagram for Mg3Sb2-based material in a binary parameters space of electronegativity difference and atomic radius difference of extrinsic elements with Mg atom. Based on this doping diagram, we designed a multiple interstitial doped TMx:Mg3Sb1.5Bi0.5 (TM = CrMnFeCoCu) material, and achieved a high dimensionless figure of merit value of 0.76 at room temperature and 1.83 at 500 °C, respectively. The multiple interstitial dopants significantly suppress the formation of Mg vacancy, which is of great importance in protecting the electrical transport channel and improving the thermal stability. Besides, the mechanical properties are also enhanced due to the random distribution of elements in the matrix, impeding the migration of dislocations. Our work verifies the benefits of maximized sub-lattice disordering through the multi-elements doping strategy in the Mg3Sb1.5Bi0.5 material.

materials science, multidisciplinary,physics, applied
Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Jianbao Yang,Zhibin Wang,Hong Zhao,Xinyu Luo,Wenyuan Han,Hao Wang,Linghao Meng,Xinqi She,Anlong Quan,Yixin Peng,Guoji Cai,Yi Liu,Yong Tang,Bo Feng

DOI: https://doi.org/10.3390/mi14101844

IF: 3.4

2023-09-28

Micromachines

Abstract:Thermoelectric materials are widely used in refrigeration chips, thermal power generation, catalysis and other fields. Mg3Bi2-based thermoelectric material is one of the most promising thermoelectric materials. Herein, the Mg3Bi2-based samples were prepared by high temperature synthesis, and the influence of Mg/Sb content on the electrical transport properties and semi-conductivity/semi-metallicity of the materials has been studied. The results indicate that the efficiency of introducing electrons from excess Mg prepared by high temperature synthesis is lower than that introduced by ball milling, due to the high vapor pressure of Mg. The doping of Sb/Te at the Bi site would make it easier for the material to change from p-type conduction to n-type conduction. With the increase in Mg content, the semi-conductivity of the material becomes weaker, the semi-metallicity becomes stronger, and the corresponding conductivity increases. With the increase in Sb content, the samples exhibit the opposite changes. The highest power factor of ~1.98 mWm−1K−2 is obtained from the Mg3.55Bi1.27Sb0.7Te0.03 sample.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Large Magneto‐transverse and Longitudinal Thermoelectric Effects in the Magnetic Weyl Semimetal TbPtBi

Honghui Wang,Zizhen Zhou,Jianjun Ying,Ziji Xiang,Rui Wang,Aifeng Wang,Yisheng Chai,Mingquan He,Xu Lu,Guang Han,Yu Pan,Guoyu Wang,Xiaoyuan Zhou,Xianhui Chen

DOI: https://doi.org/10.1002/adma.202206941

IF: 29.4

2022-10-29

Advanced Materials

Abstract:Magnetic topological semimetals provide new opportunities for power generation and solid‐state cooling based on thermoelectric (TE) effect. The interplay between magnetism and nontrivial bands topology prompts the magnetic topological semimetals to yield strong transverse thermoelectric effect, while the longitudinal TE performance is usually poor. Herein, we demonstrate that the magnetic Weyl semimetal TbPtBi has high value for both transverse and longitudinal thermopower with large power factor (PF). At 300 K and 13.5 Tesla, the transverse thermopower and PF reach up to 214 μV K−1 and 35 μW cm−1 K−2, respectively, which are comparable to those of state‐of‐the‐art TE materials. Combining first‐principles calculations, longitudinal magnetoresistance and planar Hall resistance measurements, and two‐band model fitting, we attribute the large transverse thermopower and PF to both bipolar effect and large Hall angle. Moreover, the imperfectly compensated charge carriers and large transverse magnetoresistance induce the maximum magneto‐longitudinal thermopower of 251 μV K−1 with a PF of 24 μW cm−1 K−2 at 150 K and 13.5 Tesla, which is two times higher than that at zero magnetic field. This work demonstrates the great potential of topological semimetals for TEs and offers a new excellent candidate for magneto‐TEs. This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Large Nernst Effect and Possible Temperature-Induced Lifshitz Transition in Topological Semimetal YbMnSb2

Sheng Xu,Chenxi Jiang,Shu-Xiang Li,Jun-Jian Mi,Zheng Li,Tian-Long Xia,Qian Tao,Zhu-An Xu

DOI: https://doi.org/10.1103/physrevb.107.245138

IF: 3.7

2023-01-01

Physical Review B

Abstract:Topological materials provide an interesting platform in the study of thermoelectric effect due to their novel electronic properties. Here we report the magneto-Seebeck (MS) effect, large Nernst effect, and a possible temperature-induced Lifshitz transition in topological semimetal YbMnSb2. It exhibits evident quantum oscillations in the MS effect from which six frequencies are extracted and a light effective mass of F4 is obtained. The large Nernst effect with the Nernst thermopower of about 40 & mu;VK-1 is discovered around 120 K and 14 T. Combining the analysis of the first-principles calculations and the Hall effect, we suggest that the large Nernst signal could mainly stem from the Dirac bands-induced high mobility and small Fermi energy (& epsilon;F). Besides, it could be further enhanced by the modified carrier properties resulting from the temperature-induced Lifshitz transition through the so-called ambipolar effect.
High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics

Boxuan Hu,Xiao‐Lei Shi,Tianyi Cao,Siqi Liu,Min Zhang,Wanyu Lyu,Liangcao Yin,Tuquabo Tesfamichael,Qingfeng Liu,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/advs.202409788

IF: 15.1

2024-10-02

Advanced Science

Abstract:A method to tune the p‐ and n‐type Mg3Bi2 thin films using magnetron sputtering followed by ex‐situ annealing. The reactions occurring during the ex‐situ annealing are analyzed, and the thin film achieve a power factor of 1.59 μW cm−1 K−2 and a ZT value of 0.19 at 60 °C. With the advances in bulk Mg3Bi2, there is increasing interest in pursuing whether Mg3Bi2 can be fabricated into flexible thin films for wearable electronics to expand the practical applications. However, the development of fabrication processes for flexible Mg3Bi2 thin films and the effective enhancement of their thermoelectric performance remain underexplored. Here, magnetron sputtering and ex‐situ annealing techniques is used to fabricate flexible Mg3Bi2 thermoelectric thin films with a power factor of up to 1.59 μW cm−1 K−2 at 60 °C, ranking as the top value among all reported n‐type Mg3Bi2 thin films. Extensive characterizations show that ex‐situ annealing, and optimized sputtering processes allow precise control over film thickness. These techniques ensure high adhesion of the films to various substrates, resulting in excellent flexibility, with <10% performance degradation after 500 bending cycles with a radius of 5 mm. Furthermore, for the first time, flexible thermoelectric devices are fabricated with both p‐type and n‐type Mg3Bi2 legs, which achieve an output power of 0.17 nW and a power density of 1.67 μW cm−2 at a very low temperature difference of 2.5 °C, highlighting the practical application potential of the device.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Kangkang Yang,Xiangyu Li,Congli Sun,Wei Song,Wenyu Zhao,Qingjie Zhang

DOI: https://doi.org/10.1002/adfm.202315886

IF: 19

2024-04-03

Advanced Functional Materials

Abstract:Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials. An ultra‐stable room temperature thermoelectric performance is obtained. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2‐based alloys toward high room‐temperature thermoelectric performance. n‐type Mg3(Sb, Bi)2 has excellent room temperature thermoelectric performance, which is, however, severely restricted by the negatively charged Mg vacancies that significantly deteriorate the carrier mobility. Herein, by manipulating the threshold solubility and defect formation energy of Mn, multivalent Mn is selectively introduced that synergistically promotes the carrier conduction according to different Mg chemical potentials; In Mg‐rich areas, interstitial Mn dominates which effectively reduces the migration and accumulation of Mg vacancies, while in Mg poor areas, interstitial Mn switches to substitutional sites that directly compensate for the negative charge. All the Mn centers possess Jahn–Teller inactive positions, leading to an ultra‐stable room temperature thermoelectric performance with a leading ZT up to 0.97. This work reveals the critical effect of multivalent and multifunctional transition metal incorporation in Mg3(Sb, Bi)2‐based alloys toward high room‐temperature thermoelectric performance.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Jing-Wei Li,Weishu Liu,Wei Xu,Hua-Lu Zhuang,Zhijia Han,Feng Jiang,Peng Zhang,Haihua Hu,Hanbin Gao,Yilin Jiang,Bowen Cai,Jun Pei,Bin Su,Qian Li,Kei Hayashi,Hezhang Li,Yuzuru Miyazaki,Xingzhong Cao,Qiang Zheng,Jing-Feng Li

DOI: https://doi.org/10.1002/adma.202209119

Abstract:Mg3 (Sb,Bi)2 is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (VMg ) in Mg3 (Sb,Bi)2 . This study proposes an approach to mitigating the negative scattering effect of VMg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and Cs -corrected scanning transmission electron microscopy analyses indicated that the VMg tends to coalesce due to the introduced Bi vacancies (VBi ). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic VMg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at ∆T = 473 K are achieved in the optimized composition of Mg3 (Sb,Bi)2 by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg3 (Sb,Bi)2 as an emerging thermoelectric material.
Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Zhe Xu,Xiao-Lei Shi,Yibo Zhang,Jisheng Liang,Meng Li,Chengyan Liu,Lei Miao,Siqi Liu,Shihao Wang,Qi Zhou,Jie Gao,Zhongwei Zhang,Wei-Di Liu,Ying Peng,Jun-Liang Chen,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.cej.2024.155147

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Owing to the non-toxicity and low cost, Mg3Sb2-based Zintls are promising candidates for mid-temperature thermoelectric applications. However, the thermoelectric performance of p-type Mg3Sb2 is significantly lower than that of n-type ones. Here, we achieve simultaneous optimization of the band structure and enhanced phonon scattering through the combined doping of Na at the cation site and Bi at the anion site, leading to a competitive figure of merit, ZT of 0.73 at 773 K and a maximum theoretical energy conversion efficiency of 6.5 % at a temperature difference of 450 K. First-principles calculations indicate that Na and Bi co-doping effectively narrows the band gap and shifts the Fermi level into the valence band, thereby increasing the hole carrier concentration. This ensures a relatively high Seebeck coefficient and improved electrical conductivity, resulting in an excellent power factor of 7.5 mu W cm(-1) K-2. Additionally, by adjusting the amount of Bi nanoprecipitates in the matrix, the heterogeneous interfaces significantly enhance phonon scattering and markedly reduce the lattice thermal conductivity (0.52 W m(-1) K-1), collectively leading to the high thermoelectric performance. Furthermore, by pairing n-type Mg3.18Y0.02Sb1.5Bi0.49Se0.01, a double-leg thermoelectric device achieves an energy conversion efficiency of 4.1 % with a temperature difference of 390 K.
Giant phonon anharmonicity driven by the asymmetric lone pairs in Mg3Bi2

Y. Zhu,J. Liu,B. Wei,S. Xu,Y. Song,X. Wang,T.-L. Xia,J. Chen,G.J. Snyder,J. Hong,Y. Zhu,J. Liu,B. Wei,S. Xu,Y. Song,X. Wang,T.-L. Xia,J. Chen,G.J. Snyder,J. Hong

DOI: https://doi.org/10.1016/j.mtphys.2022.100791

IF: 11.021

2022-10-01

Materials Today Physics

Abstract:Mg3Bi2-based materials exhibit high thermoelectric performance at ambient temperature benefitting from their low lattice thermal conductivity. However, the underlying physics of this low lattice thermal conductivity in a simple hexagonal crystal structure of Mg3Bi2 remain puzzling. Understanding the microscopic thermal transport behavior and its correlation with bonding, lattice dynamics are critical to improve the thermoelectric performance and design new promising functional materials. In this work, the giant anharmonic phonon modes are experimentally observed via measuring temperature-dependent inelastic x-ray scattering (IXS) for Mg3Bi2 single-crystal, which is also verified by the anomalously large Grüneisen parameters and frozen phonon potential calculations. Furthermore, we propose that the giant anharmonicty is associated with the asymmetric Bismuth 6s lone-pair electrons. The present work builds a microscopic connection between electronic structure and giant anharmonic phonon scattering, providing new insights on the low lattice thermal conductivity of Mg3Bi2, and paves the way to design novel high-efficient thermoelectrics for application in energy recycling and refrigeration.

materials science, multidisciplinary,physics, applied
Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values

Jing-Wei Li,Zhijia Han,Jincheng Yu,Hua-Lu Zhuang,Haihua Hu,Bin Su,Hezhang Li,Yilin Jiang,Lu Chen,Weishu Liu,Qiang Zheng,Jing-Feng Li

DOI: https://doi.org/10.1038/s41467-023-43228-9

IF: 16.6

2023-11-16

Nature Communications

Abstract:Abstract Mg 3 (Sb,Bi) 2 is a promising thermoelectric material suited for electronic cooling, but there is still room to optimize its low-temperature performance. This work realizes >200% enhancement in room-temperature zT by incorporating metallic inclusions (Nb or Ta) into the Mg 3 (Sb,Bi) 2 -based matrix. The electrical conductivity is boosted in the range of 300–450 K, whereas the corresponding Seebeck coefficients remain unchanged, leading to an exceptionally high room-temperature power factor >30 μW cm −1 K −2 ; such an unusual effect originates mainly from the modified interfacial barriers. The reduced interfacial barriers are conducive to carrier transport at low and high temperatures. Furthermore, benefiting from the reduced lattice thermal conductivity, a record-high average zT > 1.5 and a maximum zT of 2.04 at 798 K are achieved, resulting in a high thermoelectric conversion efficiency of 15%. This work demonstrates an efficient nanocomposite strategy to enhance the wide-temperature-range thermoelectric performance of n-type Mg 3 (Sb,Bi) 2 , broadening their potential for practical applications.

multidisciplinary sciences
Bi-Deficiency Leading to High-Performance in Mg<sub>3</sub>(Sb,Bi)<sub>2</sub>-Based Thermoelectric Materials

Jing-Wei Li,Weishu Liu,Wei Xu,Hua-Lu Zhuang,Zhijia Han,Feng Jiang,Peng Zhang,Haihua Hu,Hanbin Gao,Yilin Jiang,Bowen Cai,Jun Pei,Bin Su,Qian Li,Kei Hayashi,Hezhang Li,Yuzuru Miyazaki,Xingzhong Cao,Qiang Zheng,Jing-Feng Li

DOI: https://doi.org/10.1002/adma.202209119

2023-01-01

Abstract:Mg-3(Sb,Bi)(2) is a potential nearly-room temperature thermoelectric compound composed of earth-abundant elements. However, complex defect tuning and exceptional microstructural control are required. Prior studies have confirmed the detrimental effect of Mg vacancies (V-Mg) in Mg-3(Sb,Bi)(2). This study proposes an approach to mitigating the negative scattering effect of V-Mg by Bi deficiency, synergistically modulating the electrical and thermal transport properties to enhance the thermoelectric performance. Positron annihilation spectrometry and C-s-corrected scanning transmission electron microscopy analyses indicated that the V-Mg tends to coalesce due to the introduced Bi vacancies (V-Bi). The defects created by Bi deficiency effectively weaken the scattering of electrons from the intrinsic V-Mg and enhance phonon scattering. A peak zT of 1.82 at 773 K and high conversion efficiency of 11.3% at increment T = 473 K are achieved in the optimized composition of Mg-3(Sb,Bi)(2) by tuning the defect combination. This work demonstrates a feasible and effective approach to improving the performance of Mg-3(Sb,Bi)(2) as an emerging thermoelectric material.
Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Sen Xie,Xiaolin Wan,Yasong Wu,Chunxia Li,Fan Yan,Yujie Ouyang,Haoran Ge,Xianda Li,Yong Liu,Rui Wang,Michael Y Toriyama,G Jeffrey Snyder,Jiong Yang,Qingjie Zhang,Wei Liu,Xinfeng Tang

DOI: https://doi.org/10.1002/adma.202400845

Abstract:Topological electronic transition is the very promising strategy for achieving high band degeneracy (NV) and for optimizing thermoelectric performance. Herein, this work verifies in p-type Mg3Sb2- xBix that topological electronic transition could be the key mechanism responsible for elevating the NV of valence band edge from 1 to 6, leading to much improved thermoelectric performance. Through comprehensive spectroscopy characterizations and theoretical calculations of electronic structures, the topological electronic transition from trivial semiconductor is unambiguously demonstrated to topological semimetal of Mg3Sb2- xBix with increasing the Bi content, due to the strong spin-orbit coupling of Bi and the band inversion. The distinct evolution of Fermi surface configuration and the multivalley valence band edge with NV of 6 are discovered in the Bi-rich compositions, while a peculiar two-step band inversion is revealed for the first time in the end compound Mg3Bi2. As a result, the optimal p-type Mg3Sb0.5Bi1.5 simultaneously obtains a positive bandgap and high NV of 6, and thus acquires the largest thermoelectric power factor of 3.54 and 6.93 µW cm-1 K-2 at 300 and 575 K, respectively, outperforming the values in other compositions. This work provides important guidance on improving thermoelectric performance of p-type Mg3Sb2- xBix utilizing the topological electronic transition.
Plasticity in single-crystalline Mg3Bi2 thermoelectric material

Peng Zhao,Wenhua Xue,Yue Zhang,Shizhen Zhi,Xiaojing Ma,Jiamin Qiu,Tianyu Zhang,Sheng Ye,Huimin Mu,Jinxuan Cheng,Xiaodong Wang,Shuaihang Hou,Lijia Zhao,Guoqiang Xie,Feng Cao,Xingjun Liu,Jun Mao,Yuhao Fu,Yumei Wang,Qian Zhang

DOI: https://doi.org/10.1038/s41586-024-07621-8

IF: 64.8

Nature

Abstract:Most of the state-of-the-art thermoelectric materials are inorganic semiconductors. Owing to the directional covalent bonding, they usually show limited plasticity at room temperature1,2, for example, with a tensile strain of less than five per cent. Here we discover that single-crystalline Mg3Bi2 shows a room-temperature tensile strain of up to 100 per cent when the tension is applied along the (0001) plane (that is, the ab plane). Such a value is at least one order of magnitude higher than that of traditional thermoelectric materials and outperforms many metals that crystallize in a similar structure. Experimentally, slip bands and dislocations are identified in the deformed Mg3Bi2, indicating the gliding of dislocations as the microscopic mechanism of plastic deformation. Analysis of chemical bonding reveals multiple planes with low slipping barrier energy, suggesting the existence of several slip systems in Mg3Bi2. In addition, continuous dynamic bonding during the slipping process prevents the cleavage of the atomic plane, thus sustaining a large plastic deformation. Importantly, the tellurium-doped single-crystalline Mg3Bi2 shows a power factor of about 55 microwatts per centimetre per kelvin squared and a figure of merit of about 0.65 at room temperature along the ab plane, which outperforms the existing ductile thermoelectric materials3,4.
Giant Longitudinal and Transverse Magneto Thermoelectric Effects in a Van Del Waals Semimetal TaCo2Te2

Zhigang Gui,Ye Yang,Xikai Wen,Yuqing Zhang,Yikang Li,Yanjun Li,Qingyuan Liu,Mingjie Wang,Jianjun Ying,Xianhui Chen

DOI: https://doi.org/10.1039/d4ee01857e

IF: 32.5

2024-01-01

Energy & Environmental Science

Abstract:Nowadays thermoelectric (TE) cooling technologies are hindered by the paucity of efficient low-temperature TE materials, which are critical to both cryogenic research and practical applications. Herein, we present the discovery...
Maximizing the performance of n-type Mg3Bi2 based materials for room-temperature power generation and thermoelectric cooling

Zihang Liu,Weihong Gao,Hironori Oshima,Kazuo Nagase,Chul-Ho Lee,Takao Mori

DOI: https://doi.org/10.1038/s41467-022-28798-4

IF: 16.6

2022-03-02

Nature Communications

Abstract:Abstract Although the thermoelectric effect was discovered around 200 years ago, the main application in practice is thermoelectric cooling using the traditional Bi 2 Te 3 . The related studies of new and efficient room-temperature thermoelectric materials and modules have, however, not come to fruition yet. In this work, the electronic properties of n-type Mg 3.2 Bi 1.5 Sb 0.5 material are maximized via delicate microstructural design with the aim of eliminating the thermal grain boundary resistance, eventually leading to a high zT above 1 over a broad temperature range from 323 K to 423 K. Importantly, we further demonstrated a great breakthrough in the non-Bi 2 Te 3 thermoelectric module, coupled with the high-performance p-type α-MgAgSb, for room-temperature power generation and thermoelectric cooling. A high conversion efficiency of ~2.8% at the temperature difference of 95 K and a maximum temperature difference of 56.5 K are experimentally achieved. If the interfacial contact resistance is further reduced, our non-Bi 2 Te 3 module may rival the long-standing champion commercial Bi 2 Te 3 system. Overall, this work represents a substantial step towards the real thermoelectric application using non-Bi 2 Te 3 materials and devices.

multidisciplinary sciences
Polycrystalline MnBi as a transverse thermoelectric material

Alessandro Sola,Elena Olivetti,Luca Martino,Vittorio Basso

DOI: https://doi.org/10.48550/arXiv.2211.09553

2022-11-17

Abstract:To assess the potential of polycrystalline MnBi as a transverse thermoelectric material, we have experimentally investigated its anomalous Nernst effect (ANE) by means of the heat flux method. We prepared MnBi samples by powder metallurgy; this technique allows the preparation of samples in arbitrary shapes with the possibility to tailor their magnetic properties. In the material exhibiting the highest remanent magnetization, we found a value of the ANE thermopower of -1.1 $\mu$V/K at 1 T, after the compensation of the ordinary Nernst effect from pure bismuth present inside the polycrystalline sample. This value is comparable with those reported in the literature for single crystals.

Materials Science
Large transverse thermoelectric effect induced by the mixed-dimensionality of Fermi surfaces

Hikari Manako,Shoya Ohsumi,Yoshiki J. Sato,R. Okazaki,D. Aoki

DOI: https://doi.org/10.1038/s41467-024-48217-0

IF: 16.6

2024-05-10

Nature Communications

Abstract:Transverse thermoelectric effect, the conversion of longitudinal heat current into transverse electric current, or vice versa, offers a promising energy harvesting technology. Materials with axis-dependent conduction polarity, known as p × n -type conductors or goniopolar materials, are potential candidate, because the non-zero transverse elements of thermopower tensor appear under rotational operation, though the availability is highly limited. Here, we report that a ternary metal LaPt 2 B with unique crystal structure exhibits axis-dependent thermopower polarity, which is driven by mixed-dimensional Fermi surfaces consisting of quasi-one-dimensional hole sheet with out-of-plane velocity and quasi-two-dimensional electron sheets with in-plane velocity. The ideal mixed-dimensional conductor LaPt 2 B exhibits an extremely large transverse Peltier conductivity up to ∣ α y x ∣ = 130 A K −1 m −1 , and its transverse thermoelectric performance surpasses those of topological magnets utilizing the anomalous Nernst effect. These results thus manifest the mixed-dimensionality as a key property for efficient transverse thermoelectric conversion.

multidisciplinary sciences

Large Transverse and Longitudinal Magneto‐Thermoelectric Effect in Polycrystalline Nodal‐Line Semimetal Mg 3 Bi 2

Giant transverse thermoelectric effect induced by topological transition in polycrystalline Dirac semimetal Mg3Bi2

A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2

High thermoelectric performance and anisotropy studies of n-type Mg3Bi2-based single crystal

Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site

Effect of Composition Adjustment on the Thermoelectric Properties of Mg3Bi2-Based Thermoelectric Materials

Large Magneto‐transverse and Longitudinal Thermoelectric Effects in the Magnetic Weyl Semimetal TbPtBi

Large Nernst Effect and Possible Temperature-Induced Lifshitz Transition in Topological Semimetal YbMnSb2

High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics

Robust Room Temperature Thermoelectric Performance of Mg3(Sb, Bi)2‐Based Alloys via Multivalent Mn Doping

Bi-Deficiency Leading to High-Performance in Mg3 (Sb,Bi)2 -Based Thermoelectric Materials

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Giant phonon anharmonicity driven by the asymmetric lone pairs in Mg3Bi2

Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values

Bi-Deficiency Leading to High-Performance in Mg<sub>3</sub>(Sb,Bi)<sub>2</sub>-Based Thermoelectric Materials

Topological Electronic Transition Contributing to Improved Thermoelectric Performance in p-Type Mg3Sb2- xBix Solid Solutions

Plasticity in single-crystalline Mg3Bi2 thermoelectric material

Giant Longitudinal and Transverse Magneto Thermoelectric Effects in a Van Del Waals Semimetal TaCo2Te2

Maximizing the performance of n-type Mg3Bi2 based materials for room-temperature power generation and thermoelectric cooling

Polycrystalline MnBi as a transverse thermoelectric material

Large transverse thermoelectric effect induced by the mixed-dimensionality of Fermi surfaces