Abstract:It is commonly believed that the impact of the top electrodes on the ferroelectricity of hafnium-based thin films is due to strain engineering. However, several anomalies have occurred that put existing theories in doubt. This work carries out a detailed study of this issue using both theoretical and experimental approaches. The 10 nm Hf0.5Zr0.5O2 (HZO) films are prepared by atomic layer deposition, and three different top capping electrodes (W/MO/ITO) are deposited by physical vapor deposition. The electrical testing finds that the strain does not completely control the ferroelectricity of the devices. The results of further piezoelectric force microscopy characterization exclude the potential interference of the top capping electrodes and interface for electrical testing. In addition, through atomic force microscopy characterization and statistical analysis, a strong correlation between the grain size of the top electrode and the grain size of the HZO film has been found, suggesting that the grain size of the top electrode can induce the formation of the grain size in HZO thin films. Finally, the first-principles calculation is carried out to understand the impact of the strain and grain size on the ferroelectric properties of HZO films. The results show that the strain is the dominant factor for ferroelectricity when the grain size is large (>10 nm). However, when the grain size becomes thinner (<10 nm), the regulation effect of grain sizes increases significantly, which could bring a series of benefits for device scaling, such as device-to -device variations, film uniformity, and domain switch consistency. This work not only completes the understanding of ferroelectricity through top electrode modulation but also provides strong support for the precise regulation of ferroelectricity of nanoscale devices and ultrathin HZO ferroelectric films.

The contradiction between thermodynamic and kinetic effects of stress-modulated antiferroelectricity in ZrO2 thin films

The contradiction between thermodynamic and kinetic effects of stress-modulated antiferroelectricity in ZrO2 thin films

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Understanding the Stress Effect of TiN Top Electrode on Ferroelectricity in Hf0.5Zr0.5O2 Thin Films

The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf0.5Zr0.5O2 Thin Films

Regulating Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: Exploring the Combined Impact of Oxygen Vacancy and Electrode Stresses

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Phase transitions and thermal-stress-induced structural changes in a ferroelectric Pb(Zr0.80Ti0.20)O3 single crystal

Orientation-dependent Phase Switching Process and Strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 Antiferroelectric Thin Films

Understanding the Effect of Top Electrode on Ferroelectricity in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films

Ferroelectricity in tetragonal ZrO$_2$ thin films

Disentangling stress and strain effects in ferroelectric HfO2

Ferroelectricity in epitaxially strained rhombohedral ZrO2 thin films

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Ferroelastically Protected Reversible Orthorhombic to Monoclinic-Like Phase Transition in ZrO2 Nanocrystals

Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO 2 nanocrystals

Influence of depolarization field on temperature-misfit strain phase diagram of PbZr0.4Ti0.6O3 ultrathin films

In-situ Atomic Visualization of Structural Transformation in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film: from Nonpolar Tetragonal Phase to Polar Orthorhombic Phase

Thickness Dependence of the Crystallization and Phase Transition in ZrO 2 Thin Films

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Effect of the Out-of-plane Stress on the Properties of Epitaxial SrTiO3 Films with Nano-Pillar Array on Si-substrate