Bismuth sulfide nanoflowers as high performance near-infrared laser detectors and visible-light-driven photocatalysts

Junfeng Chao,Shumin Xing,Jianzhou Zhao,Changhai Qin,Degong Duan,Yuliang Zhao,Qiang He

DOI: https://doi.org/10.1039/c6ra06339j

IF: 4.036

2016-01-01

RSC Advances

Abstract:Bi 2 S 3 nanoflowers flexible laser detector.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors.

Guihuan Chen,Yongqiang Yu,Kun Zheng,Tao Ding,Wenliang Wang,Yang Jiang,Qing Yang

DOI: https://doi.org/10.1002/smll.201403508

IF: 13.3

2015-01-01

Small

Abstract:Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.
Synthesis, Characterization, and Photodetector Application of Alkali Metal Bismuth Chalcogenide Nanocrystals

Chi Yang,Zenghua Wang,Yihui Wu,Yinhua Lv,Bin Zhou,Wen-Hua Zhang

DOI: https://doi.org/10.1021/acsaem.8b01640

IF: 6.4

2018-12-21

ACS Applied Energy Materials

Abstract:We exploited a facile solution approach to synthesize a series of high-quality, abundant, and nontoxic bismuth ternary chalcogenides with the formula of ABiX2 (A = Na, K, or Cs, and X = S or Se) nanocrystals (NCs), achieving the first successful synthesis of KBiS2 nanoparticles and KBiSe2 and CsBiS2 nanoplatelets. The as-prepared NCs exhibit narrow size distributions, exceptional air stability, and strong absorption in the range from visible to near-infrared. The photodetector based on the ABiX2 NCs display good photoresponse and reproducibility in the visible range under monochromatic visible light at different wavelengths. The KBiS2 nanoparticle-based device demonstrates the best photoresponse property under a 525 nm laser illumination: a detectivity of approximately 5.1 × 1015 Jones, a high current on/off ratio of approximately 40, and photoresponse times of 120 ms (rise time) and 220 ms (fall time), respectively. These results indicate that ABiX2 NCs are potential candidates for use in new multifunctional photoelectronic devices.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Large-area hierarchical Bi2O2S flowers composed of 2D ultrathin nanosheets for high performance self-powered IR photodetector

Ping Rong,Shiyong Gao,Mingyi Zhang,Shuai Ren,Huiqing Lu,Jie Jia,Shujie Jiao,Yong Zhang,Jinzhong Wang

DOI: https://doi.org/10.1016/j.jallcom.2022.167128

IF: 6.2

2022-12-20

Journal of Alloys and Compounds

Abstract:Currently, bismuth oxychalcogenide family (Bi2O2X, XS, Se, Te), led by Bi2O2Se with unique characteristics, have emerged as promising candidates for high-performance optoelectronic devices. Herein, the novel Bi2O2S flowers with hierarchical structure have been successfully prepared via a facile hydrothermal method with only 3 h of reaction. The as-prepared Bi2O2S flower is composed of many ultrathin nanosheets (NSs) with a thickness of about 12–16 nm. And the possible formation mechanism of ultrathin NSs self-assembled Bi2O2S flowers is further analyzed. In addition, a self-powered infrared photodetector based on Bi2O2S flowers, which can work without an external power, is designed. Under illumination at 850 nm light, the Bi2O2S flowers photodetector exhibits well photoresponse switching behaviors, of which the high responsivity, specific detectivity and fast response time reach up to 9.48 mA/W, 9.96 × 1010 Jones and 227.7 ms, respectively. Of particular note, the Bi2O2S flowers photodetector also possesses the eximious stability.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Nano-Bismuth-Sulfide for Advanced Optoelectronics

Zimin Li,Ye Tian

DOI: https://doi.org/10.3390/photonics9110790

IF: 2.536

2022-10-25

Photonics

Abstract:Bi2S3is a semiconductor with rational band gap around near-IR and visible range, and its nanostructures (or nano-Bi2S3) have attracted great attention due to its promising performances in optoelectronic materials and devices. An increasing number of reports point to the potential of such nanostructures to support a number of optical applications, such as photodetectors, solar cells and photocatalysts. With the aim of providing a comprehensive basis for exploiting the full potential of Bi2S3 nanostructures on optoelectronics, we review the current progress in their controlled fabrication, the trends reported (from theoretical calculations and experimental observations) in their electrical properties and optical response, and their emerging applications.

optics
Vertical SnS2/Cr–SnS2 N–n Homostructure for High-Responsivity and Fast-Response 405 Nm Near-Ultraviolet Detectors

Weishuai Duan,Zhe Liu,Xinfa Zhu,Biao He,Chao Fan,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li

DOI: https://doi.org/10.1109/led.2023.3274149

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:Near-ultraviolet (NUV) detectors based on two-dimensional (2D) materials have garnered considerable attention owing to their atomic-scale thickness, varied bandgap, and strong interaction with incident light. In this work, homostructures composed of tin disulfide/chromium–doped tin disulfide (SnS 2 /Cr–SnS 2 ) were proposed for 405 nm near-ultraviolet detectors. Afterward, superlative detectors were fabricated through the employment of micro-mechanical exfoliation and polydimethylsiloxane-assisted dry-transfer methods, anchored by the SnS 2 Cr–SnS 2 homostructures. The detectors demonstrated exceptional detection performance for 405 nm NUV radiation with a significant responsivity of $2.04\times 10^{{3}}\,\,\text {A}\cdot \text {W}^{-{1}}$ and a short response time of 8 ms, exceeding that of detectors based on most 2D materials and even commercial light detectors (Thorlabs FD11A–Si). The work presents an effective homostructure for high-performance SnS 2 -based detectors, thereby opening an opportunity for the utilization of SnS 2 in NUV detectors.
Synthesis and Photoelectrocatalytic Performance of Sb2S3 Nanorods from Natural Stibnite

Jia Si-Qi,Jiang Zheng,Chi Li-Na,Ye Ying,Hu Shuang-Shuang

DOI: https://doi.org/10.15541/jim20180006

2018-01-01

Abstract:Antimony trisulfide (Sb2S3) nanorods were successfully synthesized via hydrothermal method with the assistance of polyethylene glycol (PEG) and N,N-dimethylformamide (DMF), using natural stibnite as precursor. The effects of experimental parameters on the morphology and the properties of the obtained Sb2S3 were systematically studied, and the possible formation mechanism of Sb2S3 nanorods in the preparation process was also discussed. Phase, compositions, morphology and photoelectric properties of the products were investigated by a series of characterization methods. The photocatalytic activity of nano Sb2S3 on the degradation of methyl orange were investigated under the visible light irradiation. The results showed that the Sb2S3 nanoflakes formed after hydrothermal synthesis at 160V for 12 h, and the nanoflakes would transform into nanorods eventually after N-2-annealing at 400V for 1 h. The obtained Sb2S3 nanorods with a single crystal structure are typically 2 similar to 3 mu m in length, 100200 nm in width, which are direct semiconductor with band gap of 1.66 eV. Photocatalytic degradation rate of the obtained Sb2S3 nanorods on methyl orange under visible light irradiation is higher than that of commercial Sb2S3, which is up to 87.6% after 60 min degradation, exhibiting obvious visible-light activity.
Photodetectors: Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors (small 24/2015)

Guihuan Chen,Yongqiang Yu,Kun Zheng,Tao Ding,Wenliang Wang,Yang Jiang,Qing Yang

DOI: https://doi.org/10.1002/smll.201570138

IF: 13.3

2015-01-01

Small

Abstract:Simple drop-deposition of ultrathin Bi2S3 nanosheets allows the low-cost construction of excellent flexible photodetectors. On page 2848, Q. Yang and co-workers report a simple organometallic route to ultrathin Bi2S3 nanosheets with thicknesses down to 2.2 nm. The nanosheets can be applied for the fabrication of photoconductors that show high sensitivity to visible–NIR light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W−1, a high detectivity of 1011 Jones, a response time as fast as 10 μs, and high flexibility and durability.
Air‐Stabilized Lead‐Free Hexagonal Cs3Bi2I9 Nanocrystals for Ultrahigh‐Performance Optical Detection

Jiahui Wang,Ying Li,Lin Ma,Guozhen Shen,Qing Yang

DOI: https://doi.org/10.1002/adfm.202203072

IF: 19

2022-05-08

Advanced Functional Materials

Abstract:The authors synthesize high quality Pb‐free Cs3Bi2I9 hexagonal nanocrystals using a modulated colloidal synthetic approach and demonstrate a broad‐spectrum detector from the ultraviolet to near‐infrared range with an exceptional photodetection performance. Further, the flexible Cs3Bi2I9 photodetector serving as an image sensor is able to yield high‐resolution images. Broadband photodetectors possess enormous potentials for diverse applications while it is generally subjected to a lack of active materials with high performances under user‐friendly conditions. Bismuth‐based perovskites are promising and demonstrate better air stability than lead halide perovskites against moisture, heat, and light. In the present work, lead‐free all‐inorganic hexagonal Cs3Bi2I9 perovskite nanocrystals are successfully fabricated via a modulated colloidal synthetic route. The Cs3Bi2I9 nanocrystals are monodispersed with a size of ≈28 nm, which are applied for the construction of flexible Cs3Bi2I9 detector and vertical heterogeneous structured photodetector of p‐Si/Cs3Bi2I9/graphene. The flexible detector not only demonstrates excellent detective performance, but also yields high‐resolution photographs as an imaging sensor. The p‐Si/Cs3Bi2I9/graphene photodetector exhibits broad spectral response from ultraviolet to infrared light (254−1064 nm) with microsecond response time (31/34 μs). In particular, it performs with a high responsivity of 23.6 A W−1 and a high specific detectivity of 1.75 × 1013 Jones under 650 nm illumination even in weak light intensity as low as 1 μW cm−2, and exhibits excellent stability in ambient air, which is obviously ahead of the previously reported work. In addition, finite element analysis further demonstrates the excellent optoelectronic properties of Cs3Bi2I9 materials and the broad spectral response of vertical heterojunctions.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
CdS/CdSO4 Nanoflower-Based Photodetector with Enhanced Photoelectric Performances

Ziliang Li,Fatemeh Davar,Jiaxin Chen,Ziqing Li,Xiaosheng Fang

DOI: https://doi.org/10.1021/acsanm.0c02166

IF: 6.14

2020-01-01

ACS Applied Nano Materials

Abstract:Effective engineering of materials with distinctive nanoscale microstructures provides lots of opportunities to explore their underlying photoelectric phenomena deeply. Here, the microstructural and photoelectric characteristics of a CdS/CdSO4 flower-like nanostructure (nanoflower) prepared by a simple chemical route and a following thermal treatment were investigated. A hybrid composition of cubic CdS, hexagonal CdS, and CdSO4 phases was obtained when the thermal annealing was conducted at 480 degrees C. The conductivity of CdS/CdSO4 nanoflowers was significantly enhanced compared with that of pristine CdS nanoflowers, giving excellent photoelectric performances, such as high photocurrent (similar to 0.2 mu A), photoresponse speed (t(rise) = 2.8 ms, t(fall) = 14.4 ms), photoresponsivity (similar to 0.3 A/W), and detectivity (similar to 6 x 10(9) Jones). The conductivity gain and substantially high photoresponse speed originated from the improved crystallinity and the realization of a special microstructural defect landscape within the nanoflowers, enriching the photoelectric behavior of CdS series materials as well as the development of low-dimensional optoelectronic devices operating in a large wavelength region.
Femtosecond laser upgrading the quality of bismuth films to enhance ultra-broadband photodetection

Yucai Lin,Shuxia Chen,Chang Xu,Zipu Fan,Tingting Zou,Dong Sun,Jianjun Yang

DOI: https://doi.org/10.1364/OE.482018

IF: 3.8

2023-01-01

Optics Express

Abstract:Topological insulator bismuth has attracted considerable attention for the fabrication of room-temperature, wide bandwidth, and high-performance photodetectors due to the gapless edge state and insulating bulk state properties. However, both the photoelectric conversion and carrier transportation of the bismuth films are extremely affected by the surface morphology and grain boundaries to limit optoelectronic properties further. Here, we demonstrate a strategy of femtosecond laser treatment for upgrading the quality of bismuth films. After the treatment with proper laser parameters, the measurement of average surface roughness can be reduced from Ra = 44 nm to 6.9 nm, especially with accompany of the evident grain boundary elimination. Consequently, the photoresponsivity of the bismuth films increases approximately 2 times within an ultra-broad spectrum range from the visible to mid-infrared. This investigation suggests that the femtosecond laser treatment can help to benefit the performance of topological insulator ultra-broadband photodetectors.
Bismuth@Bismuth Sulfide Core@Shell Structure for Near Infrared II Light Triggered Photothermal Therapy

Huiwei Lv,Xiaomei Zhou,Gang Yang,Xin Su,Yan Cheng,Biao Zhang

DOI: https://doi.org/10.1002/slct.202304834

2024-03-21

ChemistrySelect

Abstract:Bismuth@bismuth sulfide core@shell structure nanoparticles with well photothermal performance were designed for cancer therapy. The photothermal conversion efficiency was 48.39 %. With the second near infrared (NIR‐II, 1064 nm) laser irradiation, bismuth@bismuth sulfide nanoparticles could effectively kill cancer cells and eliminate tumors. Near infrared (NIR) light, especially NIR‐II, triggered photothermal therapy has gained increasing attention due to its deep tissue penetration ability. The development of new NIR‐II photothermal agent may accelerate the clinical translation. As a semiconductor, bismuth (Bi) can be activated by NIR‐II light. Herein, we developed Bi@bismuth sulfide (Bi2S3) core@shell nanoparticles (NPs) as new NIR‐II triggered PTA. The photothermal conversion efficiency of Bi@Bi2S3 NPs was calculated to be 48.39 %. With 1064 nm laser irradiation, Bi@Bi2S3 NPs could effectively induce temperature elevation and kill cancer cells. In vivo experiments further prove that Bi@Bi2S3 NPs can serve as an efficient photothermal agent with well biocompatibility for tumor elimination.

chemistry, multidisciplinary
Single‐Crystalline Sb2Se3 Nanowires for High‐Performance Field Emitters and Photodetectors

Tianyou Zhai,Mingfu Ye,Liang Li,Xiaosheng Fang,Meiyong Liao,Yongfang Li,Yasuo Koide,Yoshio Bando,Dmitri Golberg

DOI: https://doi.org/10.1002/adma.201002097

IF: 29.4

2010-01-01

Advanced Materials

Abstract:Single-crystalline Sb2Se3 nanowires demonstrate excellent field-emission and photodetector properties for the first time. They show low turn-on (2.6 V μm−1) and threshold voltages (4.9 V μm−1) and a high enhancement factor (3466). The individual Sb2Se3 nanowire photodetectors exhibited a marked response to visible light (Rλ and EQE are as high as ∼8.0 A/W and ∼1650%, with a response time of less than 0.3 s).
Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer

Shukui Zhang,Hanxue Jiao,Xudong Wang,Yan Chen,Hailu Wang,Liqing Zhu,Wei Jiang,Jingjing Liu,Liaoxin Sun,Tie Lin,Hong Shen,Weida Hu,Xiangjian Meng,Dong Pan,Jianlu Wang,Jianhua Zhao,Junhao Chu

DOI: https://doi.org/10.1002/adfm.202006156

IF: 19

2020-09-21

Advanced Functional Materials

Abstract:Indium antimony is a direct, narrow bandgap III–V semiconductor with ultrahigh carrier mobility and an attractive optoelectronic device candidate for use in the visible to infrared region. Here, an infrared (IR) photodetector based on high‐quality InSb nanosheets (NSs) is presented, which shows a clear photoresponse over a broad spectral range from visible (637 nm) to infrared (4.3 µm). Due to the high surface‐to‐volume ratio of nanostructured materials, defects on the sample surface can affect performance, which is a disadvantage for the ambipolar InSb photodetectors. To eliminate the impact of sample surface defects on performance, the surface of the sample is passivated with a ferroelectric film and the mechanism of increased sensitivity is explored. After covering the protective layer, the performance of the detector is greatly improved. The responsivity and detectivity of the photodetector are 311.5 AW−1 and 9.8 × 109 Jones, respectively. Compared with devices before passivation, the dark current is two orders of magnitude lower, the responsivity is 20 times higher, and the photoresponse time is shortened from seconds to the order of milliseconds. These InSb NSs with their outstanding photoelectric properties have great potential for developing next‐generation nanoscale optoelectronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ultrathin Bi2O2S nanosheet near-infrared photodetectors

Basant Chitara,Tej B Limbu,Jason D Orlando,Yongan Tang,Fei Yan

DOI: https://doi.org/10.1039/d0nr02991b

IF: 6.7

2020-08-14

Nanoscale

Abstract:Recently, a zipper two-dimensional (2D) material Bi2O2Se belonging to the layered bismuth oxychalcogenide (Bi2O2X: X = S, Se, Te) family, has emerged as an alternate candidate to van der Waals 2D materials for high-performance electronic and optoelectronic applications. This hints towards exploring the other members of the Bi2O2X family for their true potential and bismuth oxysulfide (Bi2O2S) could be the next member for such applications. Here, we demonstrate for the first time, the scalable room-temperature chemical synthesis and near-infrared (NIR) photodetection of ultrathin Bi2O2S nanosheets. The thickness of the freestanding nanosheets was around 2-3 nm with a lateral dimension of ∼80-100 nm. A solution-processed NIR photodetector was fabricated from ultrathin Bi2O2S nanosheets. The photodetector showed high performance, under 785 nm laser illumination, with a photoresponsivity of 4 A W-1, an external quantum efficiency of 630%, and a normalized photocurrent-to-dark-current ratio of 1.3 × 1010 per watt with a fast response time of 100 ms. Taken together, the findings suggest that Bi2O2S nanosheets could be a promising alternative 2D material for next-generation large-area flexible electronic and optoelectronic devices.
Single Crystalline SmB6 Nanowires for Self-Powered, Broadband Photodetectors Covering Mid-Infrared

Yong Zhou,Jiawei Lai,Lingjian Kong,Junchao Ma,Zhu Lin,Fang Lin,Rui Zhu,Jun Xu,Shiu-Ming Huang,Dongsheng Tang,Song Liu,Zhensheng Zhang,Zhi-Min Liao,Dong Sun,Dapeng Yu

DOI: https://doi.org/10.1063/1.5023328

IF: 4

2018-01-01

Applied Physics Letters

Abstract:Self-powered photodetectors with a broadband response have attracted great attention due to their potential applications in sensing, imaging, communication, and spectroscopy. Specifically, those with the detection wavelength range covering mid-infrared at room temperature are very challenging and highly desired. Here, the photoresponse of self-powered SmB6 photodetectors is demonstrated through the spatially resolved photocurrent mapping. The photocurrent originates from the interface between the SmB6 and Au electrodes due to the charge separation by built-in electric fields at the interface. It exhibits a stable photoresponse over broadband wavelengths ranging from 488 nm to 10.6 μm at room-temperature. Our results suggest that the chemical vapor deposition grown SmB6 nanowires could be promising candidates for future broadband self-powered detectors and pave the way toward SmB6-based optoelectronic applications.
Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

Zhangxun Mo,Fen Zhang,Danyang Wang,Baocheng Cui,Qinglin Xia,Bo Li,Jun He,Mianzeng Zhong

DOI: https://doi.org/10.1063/5.0093115

IF: 4

2022-05-20

Applied Physics Letters

Abstract:Applied Physics Letters, Volume 120, Issue 20, May 2022. Alloying of semiconductors is a good strategy to manipulate their electronic band structures, which can broaden the photoresponse range of the corresponding optoelectronic devices. In addition, building a Schottky diode and improving the crystal quality of the channel semiconductor can improve the photoresponse speed of the optoelectronic device. Here, we report the design and preparation of Bi1.85In0.15S3 nanowires by a facile chemical vapor transport method. The individual Bi1.85In0.15S3 nanowire photodetectors realize excellent photoresponse in a broadband range from solar-blind deep ultraviolet (266 nm) to near-infrared (830 nm), and the obtained maximum external photoresponsivity of 95.99 A/W and detectivity of about [math] Jones at 638 nm. Furthermore, the photodetectors also exhibit the ultrafast photoresponse speed with the rise time of 190 ns and the fall time of 180 ns, owing to the high crystal quality and the Schottky contacts between the Au electrodes and nanowires. In addition, the photoresponse of photodetectors is polarization angle sensitive in a broadband range from 266 to 808 nm, and the obtained maximum dichroic ratio is 3.54 at 808 nm, which results from the structural anisotropy of the Bi1.85In0.15S3 crystal. These performances are superior to the reported Bi2S3, In2S3, and other Bi or In sulfide nanowire photodetectors. The results render (BixIn1−x)2S3 photodetectors have significant application potentials in multifunctional optoelectronics and electronics.

physics, applied
Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals

Yujie Yang,Bohua He,Zhenglin Jia,Ruiming Li,Xuan Yu,Du Wang,Cheng Lei,Yong Liu,Guang-Xing Liang,Jianbo Wang,He Zheng,Qianqian Lin

DOI: https://doi.org/10.1021/acs.nanolett.4c01959

IF: 10.8

2024-06-05

Nano Letters

Abstract:Bismuth-based chalcogenides have emerged as promising candidates for next-generation, solution-processable semiconductors, mainly benefiting from their facile fabrication, low cost, excellent stability, and tunable optoelectronic properties. Particularly, the recently developed AgBiS(2) solar cells have shown striking power conversion efficiencies. High performance bismuth-based photodetectors have also been extensively studied in the past few years. However, the fundamental properties of these...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Facile Synthesis of Bismuth Nanoparticles for Efficient Self-Powered Broadband Photodetector Application

Song Yang,Shujie Jiao,Yiyin Nie,Tanjun Jiang,Hongliang Lu,Shuo Liu,Yue Zhao,Shiyong Gao,Dongbo Wang,Jinzhong Wang,Yongfeng Li

DOI: https://doi.org/10.1016/j.jmst.2022.03.019

2022-01-01

Abstract:Bismuth,an emerging topological insulator,has attracted great interest due to its fascinating proper-ties.Herein,a facile,environmentally friendly,and low-cost solvothermal route was proposed to syn-thesize high-quality single-crystal bismuth nanoparticles.The performance of bismuth nanoparticles photoelectrochemical-type photodetector has been systematically evaluated.The responsivity spectrum shows that the bismuth nanoparticles photodetector has a broad response range from ultraviolet(UV)to near-infrared(NIR),with the highest responsivity of 4.979 mA/W at a wavelength of 405 nm without bias.Additionally,the device exhibits a fast response speed(tr＜12 ms,td＜46 ms)and a high specific detectivity(3.71×1010 Jones).These results indicate that bismuth nanoparticles have great potential in the application of self-powered broadband photodetectors with high responsivity.Moreover,the working mechanism of bismuth nanoparticles photodetector was proposed.
High-performance visible-to-near-infrared Sb2Se3 photodetectors with high-frequency rapid response

Chenchen Xu,Gaoyang Li,Zhiheng Xu,Junwei Chen,Xinyang Zhou,Yan Zhang,Jinghui Zhang,Jun Xu

DOI: https://doi.org/10.1016/j.matlet.2024.136080

IF: 3

2024-04-01

Materials Letters

Abstract:The antimony selenide (Sb2Se3) has attracted considerable attention for the potential application in high-performance visible-to-near-infrared photodetectors (PDs). Here, a solution-processed Sb2Se3 film with large crystal size has been employed to fabricate visible-to-near-infrared Sb2Se3 metal–semiconductor-metal (MSM) PDs, exhibiting excellent thin film photodetection performance. This inspiring work provides a boulevard for future applications of high-performance visible-to-near-infrared PDs.

materials science, multidisciplinary,physics, applied
CdS/CdSO 4 Nanoflower-Based Photodetector with Enhanced Photoelectric Performances

Ziliang Li,Fatemeh Davar,Jiaxin Chen,Ziqing Li,Xiaosheng Fang

DOI: https://doi.org/10.1021/acsanm.0c02166

IF: 6.14

2020-09-21

ACS Applied Nano Materials

Abstract:Effective engineering of materials with distinctive nanoscale microstructures provides lots of opportunities to explore their underlying photoelectric phenomena deeply. Here, the microstructural and photoelectric characteristics of a CdS/CdSO4 flower-like nanostructure (nanoflower) prepared by a simple chemical route and a following thermal treatment were investigated. A hybrid composition of cubic CdS, hexagonal CdS, and CdSO4 phases was obtained when the thermal annealing was conducted at 480 °C. The conductivity of CdS/CdSO4 nanoflowers was significantly enhanced compared with that of pristine CdS nanoflowers, giving excellent photoelectric performances, such as high photocurrent (∼0.2 μA), photoresponse speed (trise = 2.8 ms, tfall = 14.4 ms), photoresponsivity (∼0.3 A/W), and detectivity (∼6 × 109 Jones). The conductivity gain and substantially high photoresponse speed originated from the improved crystallinity and the realization of a special microstructural defect landscape within the nanoflowers, enriching the photoelectric behavior of CdS series materials as well as the development of low-dimensional optoelectronic devices operating in a large wavelength region.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c02166?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c02166</a>.FE-SEM images of the 480 °C treated CdS nanoflowers after ultrasonic treatment; XRD pattern of the as-prepared CdS nanoflower powders; XPS survey scan of the as-prepared, 400 and 480 °C thermally treated nanoflowers; PL spectra of the as-prepared CdS nanoflowers measured under an excitation wavelength of 340 nm; photograph of the 480 °C treated nanoflower-based PD with detailed size marking of the conducting channel; I–V curves of the 300, 400, and 480 °C treated nanoflower-based PDs measured under dark and 300–650 nm light illuminations; and comparison of the on/off switching behaviors of the PD measured with different humidities (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c02166/suppl_file/an0c02166_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology

Bismuth sulfide nanoflowers as high performance near-infrared laser detectors and visible-light-driven photocatalysts

Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors.

Synthesis, Characterization, and Photodetector Application of Alkali Metal Bismuth Chalcogenide Nanocrystals

Large-area hierarchical Bi2O2S flowers composed of 2D ultrathin nanosheets for high performance self-powered IR photodetector

Nano-Bismuth-Sulfide for Advanced Optoelectronics

Vertical SnS2/Cr–SnS2 N–n Homostructure for High-Responsivity and Fast-Response 405 Nm Near-Ultraviolet Detectors

Synthesis and Photoelectrocatalytic Performance of Sb2S3 Nanorods from Natural Stibnite

Photodetectors: Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors (small 24/2015)

Air‐Stabilized Lead‐Free Hexagonal Cs3Bi2I9 Nanocrystals for Ultrahigh‐Performance Optical Detection

CdS/CdSO4 Nanoflower-Based Photodetector with Enhanced Photoelectric Performances

Femtosecond laser upgrading the quality of bismuth films to enhance ultra-broadband photodetection

Bismuth@Bismuth Sulfide Core@Shell Structure for Near Infrared II Light Triggered Photothermal Therapy

Single‐Crystalline Sb2Se3 Nanowires for High‐Performance Field Emitters and Photodetectors

Highly Sensitive InSb Nanosheets Infrared Photodetector Passivated by Ferroelectric Polymer

Ultrathin Bi2O2S nanosheet near-infrared photodetectors

Single Crystalline SmB6 Nanowires for Self-Powered, Broadband Photodetectors Covering Mid-Infrared

Ultrafast-response and broad-spectrum polarization sensitive photodetector based on Bi1.85In0.15S3 nanowire

Modulating the Structure and Optoelectronic Properties of Solution-Processed Bismuth-Based Nanocrystals

Facile Synthesis of Bismuth Nanoparticles for Efficient Self-Powered Broadband Photodetector Application

High-performance visible-to-near-infrared Sb2Se3 photodetectors with high-frequency rapid response

CdS/CdSO 4 Nanoflower-Based Photodetector with Enhanced Photoelectric Performances