Abstract:Alloys of ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$ and ${\mathrm{Sb}}_{2}{\mathrm{Te}}_{3}\phantom{\rule{4pt}{0ex}}[{({\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x})}_{2}{\mathrm{Te}}_{3}]$ have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,${\mathrm{Sb})}_{2}{\mathrm{Te}}_{3}$ thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\ensuremath{\sim}0.7$, but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds $n$-type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the $x\ensuremath{\sim}0.7$ sample shows great similarity to pristine ${\mathrm{Bi}}_{2}{\mathrm{Te}}_{3}$. This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state dispersion, and quasiparticle lifetime in (${\mathrm{Bi}}_{1\ensuremath{-}x}{\mathrm{Sb}}_{x}$)${}_{2}{\mathrm{Te}}_{3}$.

Lateral lattice coherence lengths in thin films of bismuth telluride topological insulators, with overview on polarization factors for X-ray dynamical diffraction in monochromator crystals

X-ray tools for van der Waals epitaxy of bismuth telluride topological insulator films

Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Nanoscale characterization of bismuth telluride epitaxic layers by advanced X-ray analysis

Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in UltrathinBi2Te3Films

Epitaxial Growth of Free-Standing Bismuth Film on Graphene Embedded with Nontrivial Properties

Changes in the Crystal Lattice Parameters of Bismuth Films on Substrates with Different Thermal Expansion

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Thickness Dependent Electron-Lattice Equilibration in Thin Bi Films Studied by Time-Resolved MeV Electron Diffraction

Crystal Symmetry Breaking in Few-Quintuple Bismuth Telluride Films: Applications in Nanometrology of Topological Insulators

Thickness-dependent Electron–lattice Equilibration in Laser-Excited Thin Bismuth Films

Role of Defects in the Carrier-Tunable Topological-Insulator (Bi1-Xsbx)(2)te-3 Thin Films

Electronic properties of crystalline materials observed in X-ray diffraction

Role of Defects in the Carrier-Tunable Topological-Insulator (bi[subscript 1 − X]sb[subscript X])[subscript 2]te[subscript 3] Thin Films

Challenges of Topological Insulator Research: Bi2Te3 Thin Films and Magnetic Heterostructures

Structural Investigation of Interface and Defects in Epitaxial Bi3.25la0.75ti3o12 Film on Srruo3/Srtio3 (111) and (100)

Tracking defects of Electronic Crystals by Coherent X-ray Diffraction

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films

Anisotropic light-matter interactions in the single-crystal topological insulator bismuth selenide