Abstract:Wafer-scale thin films of hexagonal boron nitride have exceptional thermal and mechanical properties, which harness the potential use of these materials in two-dimensional electronic, device applications. Along with unavoidable defects, grains, and wrinkles, which develop during the growth process, underlying substrates influence the physical and mechanical properties of these films. Understanding the interactions of these large-scale films with different substrates is, thus, important for the implementation of this 2D system in device fabrication. MOVPE-grown 2 and 30 nm hBN/sapphire films of size 2 in. diameter are delaminated chemically and transferred on quartz, SiO 2 /Si, and sapphire substrates. The structural characteristics of these films are investigated by employing Raman spectroscopy. Our results suggest that not only the roughness but also the height modulation at the surface of the substrates play a pivotal role in determining substrate-mediated mechanical strain inhomogeneity in these films. The statistical analysis of the spectral parameters provides us with the overall characteristics of the films. Furthermore, a Stark difference in the thermal evolution of strain in these films depending on substrate materials is observed. It has been demonstrated that not only the differential thermal expansion coefficient of the substrates and the films, but also slippage of the latter during the thermal treatment determines the net strain in the films. The role of the slippage is significantly higher in 2 nm films than in 30 nm films. We believe that the observations provide crucial information on the structural characteristics of the substrate-coupled wafer-scale hBN films for their future use in technology.

Changes in the Crystal Lattice Parameters of Bismuth Films on Substrates with Different Thermal Expansion

Effect of surface states and in-plane deformation on transport properties of charge carriers in bismuth films

Lateral lattice coherence lengths in thin films of bismuth telluride topological insulators, with overview on polarization factors for X-ray dynamical diffraction in monochromator crystals

Study on lattice constant and magnetic properties of bismuth substituted YIG polycrystal thin film on different substrates prepared by rf magnetron sputtering

Thickness-dependent Electron–lattice Equilibration in Laser-Excited Thin Bismuth Films

X-ray tools for van der Waals epitaxy of bismuth telluride topological insulator films

Compositional Deformations, Absorption Spectroscopy, and Low-Temperature X-Ray Diffraction of Sr1 – xBaxBi2B2O7 Solid Solutions

Study of peculiarities of the thermal expansion of zirconium thin films by molecular-dynamics simulation

The Crystalline Structure of Thin Bismuth Layers Grown on Silicon (111) Substrates

Direct measurement of internal strains in YBa2Cu3O7-x thin films on SrTiO3 substrate

Anisotropy Analysis of the Thermal Stresses and Strain Energies in BCC Metal Films

Influence of Lattice Mismatch on Structural and Functional Properties of Epitaxial Ba0.7Sr0.3TiO3 Thin Films

Effect of Sr doping on structure, morphology and transport properties of Bi$_2$Se$_3$ epitaxial thin films

Investigation of Phase Transitions in Ferromagnetic Nanofilms on a Non-Magnetic Substrate by Computer Simulation

Thickness Dependent Electron-Lattice Equilibration in Thin Bi Films Studied by Time-Resolved MeV Electron Diffraction

Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators

Optimization of large magnetoresistance of polycrystalline Bi film

Influence of Post Deposition Annealing on Crystallinity and Dielectric Properties of Bismuth Magnesium Niobate Thin Films

Non-thermal and thermal effects on mechanical strain in substrate-transferred wafer-scale hBN films

Thermal expansion of SrxBa1−xNb2O6 across and above the ferroelectric phase transition

Anomalous Lattice Expansion of Bi-Based Superconductors