Using ferroelectric polarization to regulate and preserve the valley polarization in a HfN 2 / CrI 3 / In 2 Se 3 heterotrilayer

Baoxing Zhai,Ruiqing Cheng,Wen Yao,Lei Yin,Chenhai Shen,Congxin Xia,Jun He
DOI: https://doi.org/10.1103/physrevb.103.214114
IF: 3.7
2021-06-24
Physical Review B
Abstract:How to effectively regulate and preserve valley polarization is very important for the development of valleytronic devices in practical applications. Here, we propose a scheme of using ferroelectric polarization reversal to control valley polarization and, further, using ferroelectric nonvolatility to stably preserve the regulated valley state. We design a trilayer heterostructure, which is composed of vertically stacked two-dimensional (2D) valleytronic material HfN2, 2D ferromagnetic material CrI3, and 2D ferroelectric material In2Se3. Through first-principles simulation, we find that the polarization reversal of In2Se3 can change the orientation of the easy magnetization axis for CrI3, and the change of magnetic moment direction causes the change of valley polarization for HfN2. When In2Se3 is polarized upward, the easy magnetization axis of CrI3 is the z axis, and the valley polarization is 15 meV, while when In2Se3 is polarized downward, the easy magnetization axis of CrI3 is changed to the x-y plane, and the valley polarization is changed to zero. Then we study the ferroelectric bistability of the HfN2/CrI3/In2Se3 heterotrilayer and propose a method to preserve different valley states using ferroelectric nonvolatility.
physics, condensed matter, applied,materials science, multidisciplinary
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