Abstract:A Dirac metal is a doped (gated) Dirac material with the Fermi energy ($E_\text{F}$) lying either in the conduction or valence bands. In the non-interacting picture, optical absorption in gapless Dirac metals occurs only if the frequency of incident photons ($\Omega$) exceeds the direct (Pauli) frequency threshold, equal to $2E_\text{F}$. In this work, we study, both analytically and numerically, the role of electron-electron ($ee$) and electron-hole ($eh$) interactions in optical absorption of two-dimensional (2D) and three-dimensional (3D) Dirac metals in the entire interval of frequencies below $2E_\text{F}$. We show that, for $\Omega\ll E_\text{F}$, the optical conductivity, $\Re\sigma(\Omega)$, arising from the combination of $ee$ and certain $eh$ scattering processes, scales as $\Omega^2\ln\Omega$ in 2D and as $\Omega^2$ in 3D, respectively, both for short-range (Hubbard) and long-range (screened Coulomb) interactions. Another type of $eh$ processes, similar to Auger-Meitner (AM) processes in atomic physics, starts to contribute for $\Omega$ above the direct threshold, equal to $E_\text{F}$. Similar to the case of doped semiconductors with parabolic bands studied in prior literature, the AM contribution to $\Re\sigma(\Omega)$ in Dirac metals is manifested by a threshold singularity, $\Re\sigma(\Omega)\propto (\Omega-E_\text{F})^{d+2}$, where $d$ is the spatial dimensionality and $0<\Omega-E_\text{F}\ll E_\text{F}$. In contrast to doped semiconductors, however, the AM contribution in Dirac metals is completely overshadowed by the $ee$ and other $eh$ contributions. Numerically, $\Re\sigma(\Omega)$ happens to be small in almost the entire range of $\Omega<2E_\text{F}$. This finding may have important consequences for collective modes in Dirac metals lying below $2E_\text{F}$.

N‐photon interband absorption coefficients of direct‐gap magnetic semiconductors

Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3

Energy gap measurements based on enhanced absorption coefficient calculation from transmittance and reflectance raw data

Determining Locations of Conduction Bands and Valence Bands of Semiconductor Nanoparticles Based on Their Band Gaps

Unified theory of optical absorption and luminescence including both direct and phonon-assisted processes

Calculation of the Bandgap and of the Type of Interband Transitions in Tetrahedral Amorphous Carbon Using Electron Energy Loss Spectroscopy

Searching for Materials with High Refractive Index and Wide Band Gap: A First-Principles High-Throughput Study

Computational and experimental approach for investigation of optical properties of single-crystal MnGa2Se4

Absorption coefficient of a DMS ellipsoid quantum dot with Rashba spin–orbit interaction

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

Features of interband absorption in narrow-gap semiconductors

Electron Paramagnetic Resonance Parameters Of Co2+ In Gap, Inp, And Gaas Semiconductors

Non-equilibrium Green's function predictions of band tails and band gap narrowing in III-V semiconductors and nanodevices

Intrinsic high frequency permeability of magnetic nanocomposites: Uncertainty Principle

A statistical theory of the photoluminescent determination of the band gap energy in nano-crystals and layered materials

Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSb p-n heterojunctions: insights from ab-initio DFT+NEGF studies

Intrinsic optical absorption in Dirac metals

Two-photon absorption in silicon using the real density matrix approach

Interband optical absorption coefficient of the diluted magnetic semiconductor ellipsoid quantum dot with Rashba spin orbit interaction

\textit{Ab initio} Wannier-representation-based calculations of photocurrent in semiconductors and metals

Optical bandgap of semiconductor nanostructures: Methods for experimental data analysis