Abstract:Self-consistent semiempirical tight-binding theory is used to study the neutral and charged states of the ideal vacancies in GaP and GaSb. For the neutral states, the diagonal elements of the defect potential on the first and second nearest neighbors of a vacancy are obtained by a charge-neutrality condition, while for the charged states, these matrix elements are determined self-consistently. The theory also takes the off-diagonal matrix elements corresponding to atoms adjacent to a vacancy into account. The defect energy levels and the localizations of the levels are computed using the Lanczos–Haydock recursion method. The general character of the electronic structure of vacancies in the Ga-related III-V compound semiconductors has been extracted from these calculations and from the similar calculations we performed for vacancies in GaAs. We analyze the defect states of the vacancies in terms of chemical bondings of the crystals. It is shown that, for the cation vacancies (the Ga vacancies) in the three semiconductors, both the a1 resonances at the top of the valence band and the t2 bound states in the fundamental gap consist mainly of the atomiclike p orbitals centered on the four nearest neighbors, whereas for the anion vacancies, the a1 states at the top of the valence band contain mainly the atomiclike p orbitals of the four neighboring atoms and the t2 bound states in the fundamental gap contain both the atomiclike s and the atomiclike p orbitals of the four neighboring atoms. We also find that the t2 gap levels of the charged cation (anion) vacancies in the three semiconductors are all located in the lower (upper) half of the fundamental gap. The calculated results are in agreement with available results from local density calculations and support the identifications of the vacancy defects by the positron-annihilation technique.

Electron Paramagnetic Resonance Parameters Of Co2+ In Gap, Inp, And Gaas Semiconductors

Electron Paramagnetic Resonance Parameters for Variousv3+centers In4h- And

EPR Parameters and Local Atom-position Parameters for Co2+ Ions in CdS and CdSe Semiconductors

Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS

Theoretical studies of electron paramagnetic resonance g factor for Ti2+ ions in II–VI semiconductors

Electron ground state $g$ factor in embedded InGaAs quantum dots: An atomistic study

Magnetic and electronic Co states in layered cobaltate GdBaCo2O5.5-x

Electron paramagnetic resonance signatures of Co2+ and Cu2+ in b-Ga2O3

A Multi-Nuclear Magnetic Resonance and Density Functional Theory Investigation of Epitaxially Grown Ingap2

Studies of the optical band positions, spin-Hamiltonian parameters and defect structure for Cr3+ in CdIn2S4 crystal

Divacancies in the Ga-Related Iii-V Compound Semiconductors - Electronic-Structure and Charge States

INVESTIGATIONS ON THE LOCAL STRUCTURE AND THE EPR PARAMETERS FOR Cu2+-DOPED GaN

Phonon Sidebands of Excitons Bound to Isoelectronic Impurities in Semiconductors.

G-Factor and Exchange Energy in A Few-Electron Lateral Ingaas Quantum Dot

Studies of the G Factors and Zero-Field Splitting for the Trigonal Ti2+GaSp Defect Center in GaP Crystal

Jahn-Teller distortion geometries and electronic structures of Ga3Ge, GaGe3, and their ions.

Giant, Level-Dependent G Factors in InSb Nanowire Quantum Dots.

Electronic correlations in FeGa$_3$ and the effect of hole doping on its magnetic properties

Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory

Diamagnetic Susceptibility of Tetrahedral Semiconductors

Magneto‐Structural Correlation of Five‐Coordinate Trigonal Bipyramidal High Spin Cobalt(II) Complexes