Abstract:Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.

Sub‐Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain‐Engineered WSe2 Monolayers

High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Strain-tunable Single Photon Sources in WSe2 Monolayers

Dynamic Tuning of Single-Photon Emission in Monolayer WSe2 via Localized Strain Engineering

Generation and Detection of Strain-Localized Excitons in WS 2 Monolayer by Plasmonic Metal Nanocrystals

Probing the Nature of Single-Photon Emitters in a WSe2 Monolayer by Magneto-Photoluminescence Spectroscopy

Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates

Strain activation of localized states in WSe2

Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure

Unveiling strain-enhanced moiré exciton localization in twisted van der Waals homostructures

Strain-induced dynamic control over the population of quantum emitters in two-dimensional materials

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer

Probing the Nature of Single-Photon Emitters in a WSe 2 Monolayer by Magneto-Photoluminescence Spectroscopy

Strain engineering of the electronic states of silicon-based quantum emitters

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors

Tailoring polarization in WSe2 quantum emitters through deterministic strain engineering

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence

Resonance fluorescence from waveguide-coupled strain-localized two-dimensional quantum emitters

Strain-induced Spatially Indirect Exciton Recombination in Zinc-Blende/wurtzite CdS Heterostructures