Abstract:Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.

Strain activation of localized states in WSe2

Strain-tunable Single Photon Sources in WSe2 Monolayers

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence

Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer

Strain-induced Direct–indirect Bandgap Transition and Phonon Modulation in Monolayer WS2

Curvature-enhanced localised emission from dark states in wrinkled monolayer WSe2 at room temperature

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

Sub‐Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain‐Engineered WSe2 Monolayers

High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

Strain-induced activation of chiral-phonon emission in monolayer WS$_2$

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Strain-sensitive optical properties of monolayer tungsten diselenide

Strain regulated interlayer coupling in WSe 2 /WS 2 heterobilayer

Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Strain-induced Spatially Indirect Exciton Recombination in Zinc-Blende/wurtzite CdS Heterostructures

Strain Engineering in Monolayer WS2 and WS2 Nanocomposites

Shear-strain-mediated photoluminescence manipulation in two-dimensional transition metal dichalcogenides

Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors