Abstract:Single-crystal diamond substrates presenting a high concentration of negatively charged nitrogen-vacancy centers (NV-) are on high demand for the development of optically pumped solid-state sensors such as magnetometers, thermometers or electrometers. While nitrogen impurities can be easily incorporated during crystal growth, the creation of vacancies requires further treatment. Electron irradiation and annealing is often chosen in this context, offering advantages with respect to irradiation by heavier particles that negatively affect the crystal lattice structure and consequently the NV- optical and spin properties. A thorough investigation of electron irradiation possibilities is needed to optimize the process and improve the sensitivity of NV-based sensors. In this work we examine the effect of electron irradiation in a previously unexplored regime: extremely high energy electrons, at 155 MeV. We develop a simulation model to estimate the concentration of created vacancies and experimentally demonstrate an increase of NV- concentration by more than 3 orders of magnitude following irradiation of a nitrogen-rich HPHT diamond over a very large sample volume, which translates into an important gain in sensitivity. Moreover, we discuss the impact of electron irradiation in this peculiar regime on other figures of merits relevant for NV sensing, i.e. charge state conversion efficiency and spin relaxation time. Finally, the effect of extremely high energy irradiation is compared with the more conventional low energy irradiation process, employing 200 keV electrons from a transmission electron microscope, for different substrates and irradiation fluences, evidencing sixty-fold higher yield of vacancy creation per electron at 155 MeV.

Imaging Extreme Ultraviolet Radiation Using Nanodiamonds with Nitrogen-Vacancy Centers

Fluorescence Optical Super-Resolution Imaging of Nitrogen-Vacancy Centers Based on Saturated Competition Microscopy

High-resolution two-photon fluorescence microscope imaging of nanodiamonds containing NV color centers

Sted Imaging Of Nitrogen-Vacancy Centers In Diamond

Correlative Fluorescence and Transmission Electron Microscopy Assisted by 3D Machine Learning Reveals Thin Nanodiamonds Fluoresce Brighter

Quenching nitrogen-vacancy center photoluminescence with infrared pulsed laser

Sub-diffraction Imaging of Nitrogen-Vacancy Centers in Diamond by Stimulated Emission Depletion and Structured Illumination

Enhanced Plasmonic Trapping and Fluorescent Emission of Nitrogen-Vacancy Nanodiamonds Using a High-Efficiency Nanofocusing Device

Superresolution Multifunctional Sensing with the Nitrogen-Vacancy Center in Diamond

Super-Resolution Microscopy Using NV Center in Diamond

Emerging trends in fluorescent nanodiamond quantum sensing

Optical Far-Field Super-Resolution Microscopy Using Nitrogen Vacancy Center Ensemble in Bulk Diamond

Nanoscale fluorescence lifetime imaging with a single diamond NV center

Nanocone Structures Enhancing Nitrogen-Vacancy Center Emissions in Diamonds

Efficient conversion of nitrogen to nitrogen-vacancy centers in diamond particles with high-temperature electron irradiation

High-Throughput Detection and Manipulation of Single Nitrogen-Vacancy Center's Charge in Nanodiamonds

Fluorescence Modulation of the Nitrogen-Vacancy Center with Competition Between Charge-State Conversion and Stimulated Emission

Fabrication and characterization of diamond nitrogen-vacancy center through argon ions etching

Photoluminescence of single colour defects in 50 nm diamond nanocrystals

Creation of NV centers in diamond under 155 MeV electron irradiation

Abstract Submitted for the MAR12 Meeting of The American Physical Society Imaging of nearby NV centers beyond diffraction limit FANG-