Abstract:Abstract Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A III B V , A II B VI , and potential alternatives to formerly mentioned—“ third wave ” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A III B V APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A III B V APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10 5 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

Low Noise Equivalent Power InAs Avalanche Photodiodes for Infrared Few-Photon Detection

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Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping

Characteristics of Thin InAlAs Digital Alloy Avalanche Photodiodes.

Infrared avalanche photodiodes from bulk to 2D materials

Separate absorption, charge, and multiplication staircase avalanche photodiodes

Noise Characteristic Of Algan Based Solar-Blind Uv Avalanche Photodiodes

Multilayer Graphene/Epitaxial Silicon Near-Infrared Self-Quenched Avalanche Photodetectors

Theoretical Study of Enhancing the Performance of InP/InGaAs Avalanche Photodiodes with p‐Type‐Doped InP Interposed Layer

Study on dark current suppression of HgCdTe avalanche photodiodes for low flux photon detection

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Demonstration of ultra-low noise equivalent power using a longitudinal proximity effect transition-edge sensor

InGaAs single photon avalanche detector with ultralow excess noise

InGaAs/InP Single-Photon Detectors with 60% Detection Efficiency at 1550 Nm

GHz photon-number resolving detection with high detection efficiency and low noise by ultra-narrowband interference circuits

APDs as Single-Photon Detectors for Visible and Near-Infrared Wavelenghts down to Hz Rates

A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Comprehensive Characterization of InGaAs/InP Avalanche Photodiodes at 1550 nm with an Active Quenching ASIC

First tests of a 1 megapixel near-infrared avalanche photodiode array for ultra-low background space astronomy

Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature

Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes