Abstract:Abstract Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A III B V , A II B VI , and potential alternatives to formerly mentioned—“ third wave ” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A III B V APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A III B V APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10 5 for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.

Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes

Tuning Performance Parameters of Ge-on-Si Avalanche Photodetector, Part II: Large Bias Operation

High-Temperature Single Photon Detection Performance of 4H-Sic Avalanche Photodiodes

Noise Characterization of Geiger-Mode 4H-Sic Avalanche Photodiodes for Ultraviolet Single-Photon Detection

Passive Quenching Electronics for Geiger Mode 4H-Sic Avalanche Photodiodes

Disorder-Induced First Order Transition and Curie Temperature Lowering in Ferromagnatic Manganites

Design of a compact, radiation tolerant AlGaAs Geiger photodiode

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation

Development of Monolithic Germanium–Tin on Si Avalanche Photodiodes for Infrared Detection

4H–sic Avalanche Photodiode Linear Array Operating in Geiger Mode

Monolithic Germanium Tin on Si Avalanche Photodiodes

A Pmt-Like High Gain Avalanche Photodiode Based on Gan/Aln Periodically Stacked Structure

Al0.1Ga0.9N P-I-n Ultraviolet Avalanche Photodiodes with Suppressed Surface Leakage Current and Uniform Avalanche Breakdown.

Germanium-on-silicon Avalanche Photodiode for 1550 Nm Weak Light Signal Detection at Room Temperature

InGaAs/InAlAs avalanche photodiodes with a high responsivity and multiplication factor using carbon-doped p-InAlAs as the charge layer

Avalanche Mechanism Analysis of 4H-Sic N-I-p and P-I-n Avalanche Photodiodes Working in Geiger Mode

Infrared avalanche photodiodes from bulk to 2D materials

Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths

The characterization of normal incidence Ge/Si avalanche photodiodes (APDs) at low temperatures

After-Pulse Characterizations of Geiger-Mode 4H-Sic Avalanche Photodiodes