Abstract:Artificial intelligence has made remarkable advancements in recent years, leading to the development of algorithms and models capable of handling ever-increasing amounts of data. The computational demands of these algorithms necessitate circuit and architecture designs that go beyond the von-Neumann paradigm. Content addressable memories (CAMs), which implement parallel associative search functionality within memory blocks to overcome the memory wall bottleneck, have proven to be effective for data-intensive tasks. While current CAM designs have achieved higher storage density and energy efficiency than their CMOS-based counterparts by leveraging emerging non-volatile memories (NVM), most of these implementations are limited to binary storage cells. In this work, we propose SEE-MCAM, scalable and compact multi-bit CAM (MCAM) designs that utilize the three-terminal ferroelectric FET (FeFET) as the proxy. By exploiting the multi-level-cell characteristics of FeFETs, our proposed SEE-MCAM designs enable multi-bit associative search functions and achieve better energy efficiency and performance than existing FeFET-based CAM designs. We validated the functionality of our proposed designs by achieving 3 bits per cell CAM functionality, resulting in 3x improvement in storage density. The area per bit of the proposed SEE-MCAM cell is 8% of the conventional CMOS CAM. We thoroughly investigated the scalability and robustness of the proposed design. Evaluation results suggest that the proposed 2FeFET-1T SEE-MCAM achieves 9.8x more energy efficiency and 1.6x less search latency compared to the CMOS CAM, respectively. When compared to existing MCAM designs, the proposed SEE-MCAM can achieve 8.7x and 4.9x more energy efficiency than ReRAM-based and FeFET-based MCAMs, respectively. Benchmarking results show that our approach provides up to 3 orders of magnitude improvement in speedup and energy efficiency over a GPU implementation in accelerating a novel quantized hyperdimensional computing (HDC) application.

Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Cross-layer Design for Computing-in-Memory

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Novel Analog in-Memory Compute with > 1 nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology

First Experimental Demonstration of 3D-Stacked 2T0C DRAM Cells Based on Indium Tin Oxide Channel

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

Monolithic 3D Integration of FeFET, Hybrid CMOS Logic and Analog RRAM Array for Energy-Efficient Reconfigurable Computing-In-Memory Architecture.

Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs

SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search

CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration

First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers

c -Axis Aligned 3 nm Thick In 2 O 3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off

A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

HIGHLY SCALED CMOS DEVICE TECHNOLOGIES WITH NEW STRUCTURES AND NEW MATERIALS