Abstract:We investigate the structural and physical properties of the AgSnmSbSem+2 system with m = 1–20 (i.e., SnSe matrix and ∼5–50% AgSbSe2) from atomic, nano, and macro length scales. We find the 50:50 composition, with m = 1 (i.e., AgSnSbSe3), forms a stable cation-disordered cubic rock-salt p-type semiconductor with a special multi-peak electronic valence band structure. AgSnSbSe3 has an intrinsically low lattice thermal conductivity of ∼0.47 W m–1 K–1 at 673 K owing to the synergy of cation disorder, phonon anharmonicity, low phonon velocity, and low-frequency optical modes. Furthermore, Te alloying on Se sites creates a quinary high-entropy NaCl-type solid solution AgSnSbSe3-xTex with randomly disordered cations and anions. The extra point defects and lattice dislocations lead to glass-like lattice thermal conductivities of ∼0.32 W m–1 K–1 at 723 K and higher hole carrier concentration than AgSnSbSe3. Concurrently, the Te alloying promotes greater convergence of the multiple valence band maxima in AgSnSbSe1.5Te1.5, the composition with the highest configurational entropy. Facilitated by these favorable modifications, we achieve a high average power factor of ∼9.54 μW cm–1 K–2 (400–773 K), a peak thermoelectric figure of merit ZT of 1.14 at 723 K, and a high average ZT of ∼1.0 over a wide temperature range of 400–773 K in AgSnSbSe1.5Te1.5.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/jacs.0c07803?goto=supporting-info">https://pubs.acs.org/doi/10.1021/jacs.0c07803</a>.Experimental and computational details; Figures S1–S13 and Tables S1 and S2 (<a class="ext-link" href="/doi/suppl/10.1021/jacs.0c07803/suppl_file/ja0c07803_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Thermoelectric transport properties of p-type Bi2Se3–Sb2Se3–In2Se3 high entropy compounds

Bi8Se7: Delocalized Interlayer π-Bond Interactions Enhancing Carrier Mobility and Thermoelectric Performance near Room Temperature

Mid-temperature Thermoelectric Performance of Zone-Melted Sb2(Te,Se)3 Alloys Near Phase Transition Boundary

High entropy effect on thermoelectric properties of nonequilibrium cubic phase of AgBiSe2-2xSxTex with x = 0-0.6

Thermoelectric performance of (AgBiTe2)1-x(SnTe)x with stable cubic enabled by enhanced configurational entropy

Entropy Engineered Cubic n‐Type AgBiSe 2 Alloy with High Thermoelectric Performance in Fully Extended Operating Temperature Range

High entropy effect on thermoelectric properties of the nonequilibrium cubic phase of AgBiSe2-2 xSxTex with x = 0-0.6

High thermoelectric performance in p-type InSb with all-scale hierarchical architectures

Towards a new chalcopyrite high-performance thermoelectric semiconductor Cu3InSnSe5 by entropy engineering

p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications

High Thermoelectric Performance in the New Cubic Semiconductor AgSnSbSe 3 by High-Entropy Engineering

Entropy-driven structural transition from tetragonal to cubic phase: High thermoelectric performance of CuCdInSe 3 compound

Thermoelectric Performance of Binary Lithium-Based Compounds: Li3Sb and Li3Bi

Electronic and thermoelectric properties of semiconducting Bi2SSe2 and Bi2S2Se monolayers with high optical absorption.

Low Temperature Thermoelectric Properties of Bi2−xSbxTeSe2 Crystals Near the N–p Crossover

Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) y (Bi2Te3)0.95- x (Bi2Se3) x (Bi2S3)0.05 quaternary system

Thermoelectric performance of binary lithium-based compounds: Li 3 Sb and Li 3 Bi

Modulated Fermi Level and Relaxed Lattice Strain Leading to Enhanced Thermoelectric Properties in AgSbSe 2

Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Anisotropic Thermoelectric Properties of N-Type Te-Free (bi, Sb)2Se3 with Orthorhombic Structure

Investigation of PbSnTeSe High-Entropy Thermoelectric Alloy: A DFT Approach