Abstract:A novel core/dual‐shell heterostructure with an AlGaAs spacer is proposed to separate the electronic and the strain interfaces, being beneficial for the optical performance in the strained core. Through time‐resolved measurements, this solution enhances photoluminescence yield, extends emission decay lifetimes, and slows carrier cooling rates, broadening GaAs's applicability in photonics. Semiconductor nanowires have inspired plenty of novel nanotechnology device concepts in photonics, electronics, and sensing, owing to their unique functionalities and integrability in heterogeneous platforms. Lattice‐mismatched core/shell heterostructures, in particular, open new avenues for strain engineering and material properties modification. A notable case is the widely tunable tensile strain in the core of GaAs/InxAl1‐xAs core/shell nanowires, which can be used to tailor the GaAs bandgap for applications across near‐infrared, like optical fiber telecommunication, imaging, photovoltaics, etc. As it is shown here, though, the bandgap narrowing under high tensile strain in the GaAs core is accompanied by fast non‐radiative recombination, which is undesirable for any device application. The limiting role of the lattice‐mismatched core/shell interface is revealed, and a novel core/dual‐shell heterostructure that employs an intermediate AlyGa1‐yAs shell (spacer) is proposed. This spacer decouples the GaAs/AlyGa1‐yAs interface, which confines electrons and holes into GaAs, from the lattice‐mismatched AlyGa1‐yAs/InxAl1‐xAs one, whereas the strain in GaAs is unaffected. Choosing the optimal spacer thickness, the photoluminescence yield increases significantly, with longer emission decay lifetimes and slower carrier cooling rates. Besides unlocking the potential of GaAs for photonic applications across near‐infrared, the proposed heterostructure concept can also be adopted for other material systems.

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Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy

Selective coherent x-ray diffractive imaging of displacement fields in (Ga,Mn)As/GaAs periodical wires

Pseudomagnetic fields and strain engineering: graphene on GaN nanowires

Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (∊044) and tilt of suspended monolithic silicon nanowire structures

Strong Hall-Petch Type Behavior in the Elastic Strain Limit of Nanotwinned Gold Nanowires

Nanoscale mapping of surface strain in tapered nanorods using confocal photoluminescence spectroscopy

Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Reconstruction of three-dimensional strain field in an asymmetrical curved core-shell hetero-nanowire

Non-destructive detection of cross-sectional strain and defect structure in an individual Ag five-fold twinned nanowire by 3D electron diffraction mapping

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Buckling-Based Method for Measuring the Strain–Photonic Coupling Effect of GaAs Nanoribbons

Probing strain in wurtzite InP-InAs core-shell nanowires with Raman spectroscopy

Separated Electronic and Strain Interfaces in Core/Dual‐Shell Nanowires: Unlocking the Potential of Strained GaAs for Applications Across Near‐Infrared

Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures

Tuning hole mobility of individual p-doped GaAs nanowires by uniaxial tensile stress

In situ electron microscopy four-point electromechanical characterization of freestanding metallic and semiconducting nanowires

In-situ X-ray analysis of misfit strain and curvature of bent polytypic GaAs-In(x)Ga(1-x)As core-shell nanowires

Two-Dimensional Strain Mapping with Scanning Precession Electron Diffraction: An Investigation into Data Analysis Routines

Dislocation-free axial InAs-on-GaAs nanowires on silicon