Uptake of Enzymatically-Digested Hyaluronan by Liver Endothelial Cells in Vivo and in Vitro

S. Mochizuki,Arihiro Kano,Naohiko Shimada,A. Maruyama

DOI: https://doi.org/10.1163/156856208X393518

2009-01-01

Abstract:Intravenously-injected hyaluronan (HA) is distributed into liver in which endothelium is a site of uptake and degradation of HA. The role and fate of HA have been widely investigated; however, effects of size and dose of HA on its metabolism have not been well documented yet. To investigate these effects, we prepared fluorescein-labeled HAs, according to the modified methods described by de Belder and Wik, which were enzymatically digested. The 90 kDa fluorescein-labeled HA gradually accumulated in a liver that was distributed into the endothelium; however, 10 kDa or less HA did not. Cell fractionation and flow cytometry further demonstrated the cell of uptake in the liver is an endothelial cell, both in vivo and in vitro. Interestingly, the largest uptake by liver endothelial cells in vitro was observed in 10 kDa HA, even though which did not accumulate in liver in vivo. These results suggest that the result observed with 10 kDa HA in vivo is due to the rapid excretion in urine. Thus, inhibiting of the digestion or suppressing of the urinary excretion would enhance uptake of HA in vivo. These ideas may help to deliver drugs or genes targeting to liver endothelium.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the Colossal Magnetoresistance (CMR) effect in titanium - manganese oxide Tl₂Mn₂O₇ (a pyrochlore - structure manganese oxide other than the perovskite structure). Specifically, the paper explores the following issues:

1. **CMR mechanism**: Different from the traditional perovskite - type manganese oxides, the CMR behavior of Tl₂Mn₂O₇ cannot be explained by the double - exchange model or the Jahn - Teller distortion mechanism. Therefore, a new mechanism needs to be proposed to explain its CMR phenomenon.

2. **Carrier density change**: It has been found that the carrier density in Tl₂Mn₂O₇ changes significantly with temperature and magnetic field, especially near the Curie temperature \(T_C\). This change in carrier density has an important impact on the electrical conductivity of the material.

3. **Hall resistivity and thermoelectric power**: By measuring the Hall resistivity and magnetothermoelectric power, the transport characteristics of Tl₂Mn₂O₇ at different temperatures and magnetic fields are revealed, and these characteristics are different from those of traditional perovskite materials.

### Main conclusions of the paper

- **Carrier density change**: Research shows that the carrier density of Tl₂Mn₂O₇ increases significantly at low temperatures or when a magnetic field is applied. Especially near the Curie temperature \(T_C\), the carrier density increases by about six times, which explains its Colossal Magnetoresistance effect.

- **Conduction band edge shift**: A possible mechanism is proposed, that is, due to the strong s - d interaction, as the temperature decreases or a magnetic field is applied, the appearance of spin - polarized s - like carriers causes the conduction band edge to move downward, thereby increasing the carrier density.

- **Hall resistivity and thermoelectric power**: The experimental results show that the Hall resistivity and thermoelectric power show significant changes near the Curie temperature, further confirming the influence of the change in carrier density on the transport properties.

### Summary of mathematical formulas

The formulas involved in the paper include:

1. **General formula for Hall resistivity**:
\[
\rho_{xy} = R_O B+ 4\pi M R_S
\]
where:
- \(R_O\) is the ordinary Hall coefficient
- \(B\) is the applied magnetic field
- \(R_S\) is the anomalous Hall coefficient
- \(M\) is the magnetization intensity

2. **Carrier density calculation**:
\[
n=\frac{R_O}{e}
\]

3. **Temperature dependence of thermoelectric power** (based on the effective mass approximation):
\[
S = -\frac{1}{eT}\left(\frac{\int \tau E^{5/2}\frac{\partial f_0}{\partial E}dE}{\int \tau E^{3/2}\frac{\partial f_0}{\partial E}dE}-E_F\right)
\]
where:
- \(E_F\) is the Fermi level
- \(\tau\) is the relaxation time
- \(f_0\) is the Fermi - Dirac distribution function

In conclusion, through detailed experimental and theoretical analysis, this paper reveals the influence of the change in carrier density on the Colossal Magnetoresistance effect in Tl₂Mn₂O₇ and proposes a new mechanism to explain this phenomenon.