Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7

H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo

DOI: https://doi.org/10.1103/PhysRevB.62.12190

1999-10-22

Abstract:Hall resistivity and magneto-thermopower have been measured for colossal magnetoresistive Tl2Mn2O7 over wide temperature and magnetic-field ranges. These measurements revealed that a small number of free electron-like carriers is responsible for the magneto-transport properties. In contrast to perovskite CMR materials, the anomalous Hall coefficient is negligible even in the ferromagnetic state due to negligibly small skew scattering. The characteristic feature in Tl2Mn2O7 is that the carrier density changes with temperature and the magnetic field. The carrier density increases around TC as the temperature is lowered or as the magnetic field is increased, which explains the CMR of this material. The conduction-band-edge shift, which is caused by the strong s-d interaction between localized Mn moments and s-like conduction electrons, is a possible mechanism for the carrier density change.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the Colossal Magnetoresistance (CMR) effect in titanium - manganese oxide Tl₂Mn₂O₇ (a pyrochlore - structure manganese oxide other than the perovskite structure). Specifically, the paper explores the following issues:

1. **CMR mechanism**: Different from the traditional perovskite - type manganese oxides, the CMR behavior of Tl₂Mn₂O₇ cannot be explained by the double - exchange model or the Jahn - Teller distortion mechanism. Therefore, a new mechanism needs to be proposed to explain its CMR phenomenon.

2. **Carrier density change**: It has been found that the carrier density in Tl₂Mn₂O₇ changes significantly with temperature and magnetic field, especially near the Curie temperature \(T_C\). This change in carrier density has an important impact on the electrical conductivity of the material.

3. **Hall resistivity and thermoelectric power**: By measuring the Hall resistivity and magnetothermoelectric power, the transport characteristics of Tl₂Mn₂O₇ at different temperatures and magnetic fields are revealed, and these characteristics are different from those of traditional perovskite materials.

### Main conclusions of the paper

- **Carrier density change**: Research shows that the carrier density of Tl₂Mn₂O₇ increases significantly at low temperatures or when a magnetic field is applied. Especially near the Curie temperature \(T_C\), the carrier density increases by about six times, which explains its Colossal Magnetoresistance effect.

- **Conduction band edge shift**: A possible mechanism is proposed, that is, due to the strong s - d interaction, as the temperature decreases or a magnetic field is applied, the appearance of spin - polarized s - like carriers causes the conduction band edge to move downward, thereby increasing the carrier density.

- **Hall resistivity and thermoelectric power**: The experimental results show that the Hall resistivity and thermoelectric power show significant changes near the Curie temperature, further confirming the influence of the change in carrier density on the transport properties.

### Summary of mathematical formulas

The formulas involved in the paper include:

1. **General formula for Hall resistivity**:
\[
\rho_{xy} = R_O B+ 4\pi M R_S
\]
where:
- \(R_O\) is the ordinary Hall coefficient
- \(B\) is the applied magnetic field
- \(R_S\) is the anomalous Hall coefficient
- \(M\) is the magnetization intensity

2. **Carrier density calculation**:
\[
n=\frac{R_O}{e}
\]

3. **Temperature dependence of thermoelectric power** (based on the effective mass approximation):
\[
S = -\frac{1}{eT}\left(\frac{\int \tau E^{5/2}\frac{\partial f_0}{\partial E}dE}{\int \tau E^{3/2}\frac{\partial f_0}{\partial E}dE}-E_F\right)
\]
where:
- \(E_F\) is the Fermi level
- \(\tau\) is the relaxation time
- \(f_0\) is the Fermi - Dirac distribution function

In conclusion, through detailed experimental and theoretical analysis, this paper reveals the influence of the change in carrier density on the Colossal Magnetoresistance effect in Tl₂Mn₂O₇ and proposes a new mechanism to explain this phenomenon.